IP Library Granted Patent US 7,161,247
Granted Patent B2
US 7,161,247 · App. 10/901,420 · Granted Jan 9, 2007

Polishing composition for noble metals

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Quick Facts
Patent No.
US 7,161,247
App. No.
10/901,420
Granted
Jan 9, 2007
Kind
B2
Abstract

The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.

Claims (33)

1. A polishing composition comprising:

(a) an oxidizing agent that oxidizes a noble metal,

(b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and

(c) a liquid carrier;

wherein the oxidizing agent that oxidizes a noble metal is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodates, periodates, cerium (IV) salts, permanganate, silver (III) salts, peroxyacetic acid, organo-halo-oxy compounds, monoperoxy sulfate, monoperoxy sulfite, monoperoxy thiosulfate, monoperoxyphosphate, monoperoxypyrophosphate, and monoperoxyphosphate.

2. The polishing composition of claim 1 , wherein the oxidizing agent is potassium hydrogen peroxymonosulfate sulfate.

3. The polishing composition of claim 1 , wherein the oxidizing agent is a bromate.

4. The polishing composition of claim 1 , wherein the anion selected from the group consisting of sulfate, borate, nitrate, and phosphate is present in a concentration of about 0.05 M to about 2 M.

5. The polishing composition of claim 1 , wherein the liquid carrier comprises water.

6. The polishing composition of claim 5 , wherein the pH of the polishing composition is about 1 to about 8.

7. The polishing composition of claim 6 , wherein the pH of the polishing composition is about 2 to about 6.

8. The polishing composition of claim 1 , wherein the polishing composition further comprises an abrasive.

9. The polishing composition of claim 8 , wherein the abrasive is a metal oxide.

10. The polishing composition of claim 9 , wherein the metal oxide is selected from the group consisting of alumina, ceria, germania, magnesia, silica, titania, zirconia, co-formed products thereof, diamond, organic polymer particles, and combinations thereof.

11. A polishing composition for a substrate comprising ruthenium comprising:

(a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state,

(b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds, and

(c) a liquid carrier.

12. The polishing composition of claim 11 , wherein the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodates, periodates, cerium (IV) salts, permanganate, silver (III) salts, peroxyacetic acid, organo-halo-oxy compounds, monoperoxy sulfate, monoperoxy sulfite, monoperoxy thiosulfate, monoperoxyphosphate, monoperoxypyrophosphate, and monoperoxyhypophosphate.

13. The polishing composition of claim 12 , wherein the oxidizing agent is potassium hydrogen peroxymonosulfate sulfate.

14. The polishing composition of claim 12 , wherein the oxidizing agent is a bromate.

15. The polishing composition of claim 11 , further comprising an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate.

16. The polishing composition of claim 15 , wherein the anion selected from the group consisting of sulfate, borate, nitrate, and phosphate is present in a concentration of about 0.05 M to about 2 M.

17. The polishing composition of claim 11 , wherein the polishing additive is a metal sequestering polymer selected from the group consisting of homopolymeric polyethyleneimines and hexamethrine bromide.

18. The polishing composition of claim 11 , wherein the polishing additive is a metal chelator selected from the group consisting of maleic acid, malonic acid, 1,10-phenanthroline, 2-pyridylacetic acid, 5-formylfuran sulfonic acid, N-tris(hydroxymethyl)methyl-2-aminoethanesulfonic acid, tartaric acid, itaconic acid, chelidonic acid, 3-methyl-1,2-cyclopentanedione, and glycolamide.

19. The polishing composition of claim 11 , wherein the polishing additive is a organic thiol selected from the group consisting of alkyl mercaptans and aryl mercaptans.

20. The polishing composition of claim 11 , wherein the polishing additive is a compound that reduces ruthenium tetraoxide selected from the group consisting of ascorbic acid, pyrogallol, sodium sulfite, acetoacetamide, 3-amino-1,2,4-triazole, hypophosphorous acid, sulfurous acid, 3-hydroxy-2-methyl-4-pyrone, pyrocatechol violet, 1,2,3-trihydroxybenzene, 1,2,4-trihydroxybenzene, 1,2,5-trihydroxybenzene, 1,3,4-trihydroxybenzene, 1,3,5-trihydroxybenzene, and 4-hydroxybenzamide.

21. The polishing composition of claim 11 , wherein the polishing additive is a lactone compound selected from the group consisting of dehydroascorbic acid, α-D-glucoheptonic-γ-lactone, dihydro-4,4-dimethyl-2,3-furanedione, tetronic acid, methyl coumalate, and 4-hydroxy-6-methyl-2-pyrone.

22. The polishing composition of claim 11 , wherein the polishing additive is an α-hydroxycarbonyl compound selected from the group consisting of lactic acid, α-hydroxy-γ-butyrolactone, lactobionic acid, D-(+)-glucose, and α-D-glucoheptonic-γ-lactone.

23. The polishing composition of claim 11 , wherein the polishing composition further comprises an abrasive suspended in the liquid carrier, and the abrasive is a metal oxide selected from the group consisting of alumina, ceria, germania, magnesia, silica, titania, zirconia, co-formed products thereof, diamond, organic polymer particles, and combinations thereof.

24. The polishing composition of claim 11 , wherein the liquid carrier comprises water.

25. The polishing composition of claim 24 , wherein the pH of the polishing composition is about 1 to about 8.

26. The polishing composition of claim 25 , wherein the pH of the polishing composition is about 2 to about 6.

Assignments (10)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2005
From: DE REGE THESAURO, FRANCESCO; BRUSIC, VLASTA; THOMPSON, CHRISTOPHER C.; BAYER, BENJAMIN P.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 015551/0534 →