IP Library Granted Patent US 8,062,096
Granted Patent B2
US 8,062,096 · App. 11/173,518 · Granted Nov 22, 2011

Use of CMP for aluminum mirror and solar cell fabrication

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Quick Facts
Patent No.
US 8,062,096
App. No.
11/173,518
Granted
Nov 22, 2011
Kind
B2
Abstract

The invention is directed to a method of polishing a surface of a substrate comprising aluminum, comprising contacting a surface of the substrate with a polishing pad and a polishing composition comprising an abrasive, an agent that oxidizes aluminum, and a liquid carrier, and abrading at least a portion of the surface to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein the abrasive is in particulate form and is suspended in the liquid carrier.

Claims (58)

1. A method of polishing a surface of a substrate comprising aluminum, which method comprises:

(i) providing a substrate comprising aluminum,

(ii) providing a polishing pad,

(iii) providing a polishing composition comprising:

(a) an abrasive selected from the group consisting of silica, ceria, and zirconia,

(b) an agent that oxidizes aluminum, and

(c) a liquid carrier, wherein the abrasive is in particulate form and is suspended in the liquid carrier,

(iv) contacting a surface of the substrate with the polishing pad and the polishing composition, and

(v) abrading at least a portion of the surface of the substrate to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein polishing the surface of the substrate results in an aluminum mirror surface having a root mean square surface roughness of less than about 10 nm.

2. The method of claim 1 , wherein the substrate consists of aluminum.

3. The method of claim 1 , wherein the substrate consists of an aluminum alloy.

4. The method of claim 3 , wherein the aluminum alloy is a 6000 series aluminum alloy.

5. The method of claim 4 , wherein the aluminum alloy is 6061 T6 aluminum alloy.

6. The method of claim 1 , wherein the polishing pad consists of a polymer resin selected from the group consisting of thermoplastic elastomers, thermoplastic polyurethanes, thermoplastic polyolefins, polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, elastomeric polyethylenes, polytetrafluoroethylene, polyethyleneteraphthalate, polyimides, polyaramides, polyarylenes, polystyrenes, polymethylmethacrylates, copolymers thereof, and mixtures thereof.

7. The method of claim 6 , wherein the polishing pad consists of thermoplastic polyurethane.

8. The method of claim 1 , wherein the abrasive is fumed silica, precipitated silica, or condensation-polymerized silica.

9. The method of claim 8 , wherein the agent that oxidizes aluminum is selected from the group consisting of ammonium persulfate, hydrogen peroxide, potassium hydrogen peroxymonosulfate sulfate, and peracetic acid.

10. The method of claim 9 , wherein the polishing composition further comprises an organic acid.

11. The method of claim 1 , wherein the abrasive is present in the polishing composition in the amount of about 0.1 wt. % to about 20 wt. % based on the total weight of the polishing composition.

12. The method of claim 11 , wherein the abrasive is present in the polishing composition in the amount of about 1 wt. % to about 10 wt. % based on the total weight of the polishing composition.

13. The method of claim 1 , wherein the agent that oxidizes aluminum is selected from the group consisting of ammonium persulfate, hydrogen peroxide, potassium hydrogen peroxymonosulfate sulfate, and peracetic acid.

14. The method of claim 1 , wherein the polishing composition further comprises an organic acid.

15. The method of claim 14 , wherein the organic acid is succinic acid.

16. The method of claim 1 , further comprising the step of pre-polishing the aluminum surface prior to contacting the surface of the substrate with the polishing pad and the polishing composition.

17. The method of claim 16 , wherein the step of pre-polishing the surface of the substrate is achieved by diamond turning of the surface.

18. The method of claim 16 , wherein the step of pre-polishing the surface of the substrate is achieved by lapping.

19. The method of claim 1 , wherein the surface is polished to provide a polished surface having a predetermined surface roughness.

20. The method of claim 1 , wherein the surface is substantially planar.

21. A method of polishing a surface of a substrate comprising aluminum, which method comprises:

(i) providing a substrate comprising aluminum,

(ii) providing a polishing pad comprising (A) a resilient subpad and (B) a polymeric polishing film substantially coextensive with the resilient subpad, wherein the polymeric polishing film comprises a polishing surface and a back surface releasably associated with the resilient subpad,

(iii) providing a polishing composition comprising:

(a) an abrasive selected from the group consisting of silica, ceria, and zirconia,

(b) an agent that oxidizes aluminum, and

(c) a liquid carrier, wherein the abrasive is in particulate form and is suspended in the liquid carrier,

(iv) contacting a surface of the substrate with the polishing surface of the polishing pad and the polishing composition, and

(v) abrading at least a portion of the surface of the substrate to remove at least some aluminum from the substrate and to polish the surface of the substrate, wherein polishing the surface of the substrate results in an aluminum mirror surface having a root mean square surface roughness of less than about 10 nm.

22. The method of claim 21 , wherein the substrate consists of aluminum.

23. The method of claim 21 , wherein the substrate consists of an aluminum alloy.

24. The method of claim 23 , wherein the aluminum alloy is a 6000 series aluminum alloy.

25. The method of claim 24 , wherein the aluminum alloy is 6061 T6 aluminum alloy.

26. The method of claim 21 , wherein the resilient subpad consists of thermoplastic polyurethane.

27. The method of claim 21 , wherein the polymeric polishing film comprises a material selected from the group consisting of polycarbonate, polyester, nylon, polyvinyl chloride, and combinations thereof.

28. The method of claim 21 , wherein the abrasive is fumed silica, precipitated silica, or condensation-polymerized silica.

29. The method of claim 28 , wherein the agent that oxidizes aluminum is selected from the group consisting of ammonium persulfate, hydrogen peroxide, potassium hydrogen peroxymonosulfate sulfate, and peracetic acid.

30. The method of claim 29 , wherein the polishing composition further comprises an organic acid.

31. The method of claim 21 , wherein the abrasive is present in the polishing composition in the amount of about 0.1 wt. % to about 20 wt. % based on the total weight of the polishing composition.

32. The method of claim 31 , wherein the abrasive is present in the polishing composition in the amount of about 1 wt. % to about 10 wt. % based on the total weight of the polishing composition.

33. The method of claim 21 , wherein the agent that oxidizes aluminum is selected from the group consisting of ammonium persulfate, hydrogen peroxide, potassium hydrogen peroxymonosulfate sulfate, and peracetic acid.

34. The method of claim 21 , wherein the polishing composition further comprises an organic acid.

35. The method of claim 34 , wherein the organic acid is succinic acid.

36. The method of claim 21 , further comprising the step of pre-polishing the aluminum surface prior to contacting the surface of the substrate with the polishing pad and the polishing composition.

37. The method of claim 36 , wherein the step of pre-polishing the surface of the substrate is achieved by diamond turning of the surface.

38. The method of claim 36 , wherein the step of pre-polishing the surface of the substrate is achieved by lapping.

39. The method of claim 21 , wherein the surface is polished to provide a polished surface having a predetermined surface roughness.

40. The method of claim 21 , wherein the surface is substantially planar.

41. The method of claim 21 , wherein the surface is concave.

42. The method of claim 21 , wherein the surface is convex.

Assignments (8)
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2005
From: BRUSIC, VLASTA; JENKINS, RICHARD JON; THOMPSON CHRISTOPHER
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 016567/0736 →