IP Library Granted Patent US 6,935,931
Granted Patent B2
US 6,935,931 · App. 10/792,348 · Granted Aug 30, 2005

Microporous polishing pads

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Quick Facts
Patent No.
US 6,935,931
App. No.
10/792,348
Granted
Aug 30, 2005
Kind
B2
Abstract

The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 μm or less, wherein about 75% or more of the pores have a pore size within about 20 μm or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 μm or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Claims (15)

1. A polishing pad for chemical-mechanical polishing comprising a thermoplastic polyurethane foam with an average pore size of about 50 μm or less, wherein the thermoplastic polyurethane has a Melt Flow Index (MFI) of about 20 or less, a molecular weight of about 50,000 g/mol to about 300,000 g/mol, and a polydispersity index of about 1.1 to about 6.

2. The polishing pad of claim 1 , wherein the polyurethane foam has a Flexural Modulus of about 350 MPa to about 1000 MPa.

3. The polishing pad of claim 1 , wherein the thermoplastic polyurethane has a Rheology Processing Index of about 2 to about 10 at a shear rate of about 150 l/s and a temperature of about 205° C.

4. The polishing pad of claim 1 , wherein the thermoplastic polyurethane has a glass transition temperature of about 20° C. to about 110° C. and a melt transition temperature of about 120° C. to about 250° C.

5. The polishing pad of claim 1 , wherein the polyurethane foam has an average % compressibility of about 7 or less, an average % rebound of about 35 or greater, and a Shore D hardness of about 40 to about 90.

6. The polishing pad of claim 1 , wherein the polyurethane foam further comprises a polymer resin selected from the group consisting of thermoplastic elastomers, thermoplastic polyurethanes, polyolefins, polycarbonates, polyvinylalcohols, nylons, elastomeric rubbers, styrenic polymers, polyaromatics, fluoropolymers, polyimides, cross-linked polyurethanes, cross-linked polyolefins, polyethers, polyesters, polyacrylates, elastomeric polyethylenes, polytetrafluoroethylenes, polyethyleneteraphthalates, polyimides, polyaramides, polyarylenes, polystyrenes, polymethylmethacrylates, copolymers and block copolymers thereof, and mixtures and blends thereof.

7. The polishing pad of claim 1 , wherein the polyurethane foam further comprises a water-absorbent polymer.

8. The polishing pad of claim 7 , wherein the water-absorbent polymer is selected from the group consisting of cross-linked polyacrylamide, cross-linked polyacrylic acid, cross-linked polyvinyl alcohol, and combinations thereof.

9. The polishing pad of claim 1 , wherein the polyurethane foam further comprises particles selected from the group consisting of abrasive particles, polymer particles, composite particles, liquid carrier-soluble particles, and combinations thereof.

10. The polishing pad of claim 9 , wherein the polyurethane foam further comprises abrasive particles selected from the group consisting of silica, alumina, ceria, and combinations thereof.

11. The polishing pad of claim 1 , wherein the polyurethane foam has a void volume of about 25% or less.

12. The polishing pad of claim 1 , wherein the polyurethane foam comprises closed cells.

13. The polishing pad of claim 1 , wherein the polyurethane foam has an average pore size of about 40 μm or less.

14. The polishing pad of claim 1 , wherein the polyurethane foam has a cell density of about 10 5 cells/cm 3 or greater.

15. The polishing pad of claim 1 , wherein the polyurethane foam has a bimodal pore size distribution.

Assignments (7)
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →