Transparent microporous materials for CMP
View Patent ↗The invention is directed to a chemical-mechanical polishing pad substrate comprising a microporous closed-cell foam characterized by a narrow pore size distribution in the range of about 0.01 microns to about 10 microns. The polishing pad is produced by foaming a solid polymer sheet with a supercritical gas under an elevated temperature and pressure until the sheet is saturated with gas. The invention is further directed to a polishing pad comprising the polishing pad substrate, a method of polishing comprising the use of the polishing pad substrate, and a chemical-mechanical apparatus comprising the polishing pad substrate.
1. A chemical-mechanical polishing pad substrate comprising a microporous polymeric foam wherein at least 70% of the pores of the microporous polymeric foam are closed-celled and have an average pore size in the range of about 0.01 μm to about 10 μm, wherein the polymeric foam comprises thermoplastic polyurethane, and the thermoplastic polyurethane has a weight average molecular weight in the range of about 20,000 g/mol to about 600,000 g/mol.
2. The polishing pad substrate of claim 1 , wherein the pores of the microporous polymeric foam have an average cell size in the range of about 0.05 μm to about 5 μm.
3. The polishing pad substrate of claim 1 , wherein the microporous polymeric foam has an average cell density of at least about 10 5 cells/cm 3 .
4. The polishing pad substrate of claim 1 , wherein the microporous polymeric foam has a pore volume of about 95% or less.
5. The polishing pad substrate of claim 1 , wherein the microporous polymeric foam has a pad density of at least about 0.5 g/cm 3 .
6. The polishing pad substrate of claim 1 , wherein the microporous polymeric foam has a hardness in the range of about 75 Shore A to about 75 Shore D.
7. The polishing pad substrate of claim 1 , wherein the pad has a ratio of % compressibility to pad % rebound in the range of about 0.01 to about 1.0, measured at about 5 psi by an Ames method.
8. The polishing pad substrate of claim 1 , wherein the thermoplastic polyurethane has a polydispersity index in the range of about 1 to about 10.
9. The polishing pad substrate of claim 1 , wherein the thermoplastic polyurethane has a melt flow index in the range of about 0.1 to about 30 over ten minutes at a temperature of about 210° C. and a load of about 2160 g.
10. The polishing pad substrate of claim 1 , wherein the thermoplastic polyurethane has a flexural modulus in the range of about 25 psi to about 200,000 psi.
11. The polishing pad substrate of claim 1 , wherein the thermoplastic polyurethane has a rheology processing index in the range of about 2 to about 10.
12. The polishing pad substrate of claim 1 , wherein the thermoplastic polyurethane has a glass transition temperature in the range of about 20° C. to about 120° C.
13. A chemical-mechanical polishing apparatus comprising:
(a) a platen that rotates,
(b) a polishing pad comprising the polishing pad substrate of claim 1 , and
(c) a carrier that holds a workpiece to be polished by contacting workpiece with the rotating polishing pad.