Polishing composition containing polyether amine
View Patent ↗The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
1. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a chemical-mechanical polishing composition comprising:
(a) an abrasive,
(b) a liquid carrier, and
(c) a compound selected from the group consisting of
(1) a compound of the Formula (I)
wherein x=2-6,
(2) a compound of the Formula (II)
wherein x+z=2-4 and y=1-50, and
(3) combinations thereof,
(ii) moving the polishing component relative to the substrate, and
(iii) abrading at least a portion of the substrate to polish the substrate.
2. The method of claim 1 , wherein the polishing composition further comprises a compound selected from the group consisting of 4,7,10-trioxatridecane-1,13-diamine, piperazine, and combinations thereof.
3. The method of claim 1 , wherein the polishing composition comprises a compound of the Formula (I) wherein x=2-3 or x=5-6.
4. The method of claim 1 , wherein the polishing composition comprises a compound of Formula (II) wherein either (1) x+z=3-4 and y=8-9, (2) x+z=2-3 and y=15-16, or (3) x+z=2-3 and y=40-41.
5. The method of claim 1 , wherein the polishing composition further comprises a component different from the compound and selected from the group consisting of primary amines, secondary amines, tertiary amines, aminoalcohols, quaternary amines, and combinations thereof.
6. The method of claim 5 , wherein the component is tetramethylammonium hydroxide.
7. The method of claim 1 , wherein the substrate comprises at least one layer of polysilicon and at least one layer selected from the group consisting of silicon oxide, silicon nitride, and combinations thereof.
8. The method of claim 7 , wherein the polysilicon layer is removed from the substrate at a rate of about 400 to about 4000 Å/min.
9. The method of claim 7 , wherein the substrate comprises silicon oxide, and the silicon oxide is removed from the substrate at a rate of about 200 Å/min or less.
10. The method of claim 7 , wherein the substrate comprises silicon oxide, and the silicon nitride is removed from the substrate at a rate of about 200 Å/min or less.
11. The method of claim 1 , wherein the polishing composition further comprises a compound selected from the group consisting of EDTA, oxalic acid, polyphosphonates, and combinations thereof.