Chemical mechanical polishing systems and methods for their use
View Patent ↗Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.
1. A chemical mechanical polishing system comprising:
at least one oxidizing agent;
at least one passivation film forming agent;
at least one stopping compound that is selected from the group of compounds consisting of N 4 -amine (N,N′-bis-[3-aminopropyl]ethylene diamine), 4,7,10-trioxitridecane-1,13-diamine, 3,3-dimethyl-4,4-diaminodicyclohexylmethane, 2-phenylethylamine, polyetheramines, etheramines, N,N-dimethyldipropylenetriamine, 3-[2-methoxyethoxy]propylamine, dimethylaminopropylamine, 1,4-bis(3-amino propyl)piperazine and mixtures thereof; and alanine wherein the polishing system pH ranges from 4.8 to 7.7.
2. The chemical mechanical polishing composition of claim 1 including from about 0.5 to about 10.0 wt % of oxidizing agent.
3. The chemical mechanical polishing system of claim 1 wherein the at least one oxidizing agent is hydrogen peroxide.
4. The chemical mechanical polishing composition of claim 1 wherein the composition includes at least one passivation film forming agent that includes at least one organic heterocycle having from 5 to 6 member heterocycle rings as the active functional group wherein at least one ring includes a nitrogen atom.
5. The chemical mechanical polishing composition of claim 4 wherein the passivation film forming agent is selected from benzotriazole, triazole, benzimidizole and mixtures thereof.
6. The chemical mechanical polishing system of claim 1 wherein the at least one passivation film forming agent is at least one organic heterocycle having from 5 to 6 member heterocycle rings as the active functional group wherein at least one ring includes a nitrogen atom.
7. The chemical mechanical polishing system of claim 1 further including at least one metal oxide abrasive.
8. The chemical mechanical polishing composition of claim 7 including from about 0.1 to about 30.0 wt % of alumina.
9. The chemical mechanical polishing system of claim 7 wherein the metal oxide abrasive is from about 0.1 to about 30.0 wt % of alumina.
10. The chemical mechanical polishing system of claim 1 further including a polishing pad.
11. The chemical mechanical polishing composition of claim 10 including from about 0.1 to about 30.0 wt % of at least one abrasive.
12. The chemical mechanical polishing composition of claim 1 including from about 0.1 to about 17.0 wt % of oxidizing agent.