IP Library Granted Patent US 7,415,096
Granted Patent B2
US 7,415,096 · App. 11/491,962 · Granted Aug 19, 2008

Curved X-ray reflector

Assignee: Jordan Valley Semiconductors Ltd.
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Quick Facts
Patent No.
US 7,415,096
App. No.
11/491,962
Granted
Aug 19, 2008
Kind
B2
Abstract

A method for producing X-ray optics includes providing a wafer of crystalline material having front and rear surfaces and a lattice spacing suitable for reflecting incident X-rays of a given wavelength. A thin film is deposited on the front surface of the wafer so as to generate compressive forces in the thin film sufficient to impart a concave curvature to the rear surface of the wafer with at least one radius of curvature selected for focusing the incident X-rays.

Claims (23)

1. A method for producing X-ray optics, comprising:

providing a wafer of crystalline material having front and rear surfaces and a lattice spacing suitable for reflecting incident X-rays of a given wavelength; and

depositing a thin film on the front surface of the wafer so as to generate compressive forces in the thin film sufficient to impart a concave curvature to the rear surface of the wafer with at least one radius of curvature selected for focusing the incident X-rays.

2. The method according to claim 1 , wherein providing the wafer comprises providing a silicon wafer, and wherein depositing the thin film comprises depositing a metal film on the wafer.

3. The method according to claim 2 , wherein the metal film comprises at least one of tungsten and titanium.

4. The method according to claim 1 , wherein depositing the thin film comprises forming stripes of the thin film on the front surface, the stripes having a thickness, width and spacing selected to create the at least one selected radius of curvature.

5. The method according to claim 4 , wherein the thickness, width and spacing of the stripes are chosen so as to impart to the wafer a first radius of curvature about a first curvature axis and a second radius of curvature, different from the first radius of curvature, about a second curvature axis.

6. The method according to claim 4 , wherein forming the stripes comprises sputtering the thin film onto the front surface and then etching the thin film.

7. The method according to claim 1 , and comprising thinning the rear surface of the wafer after depositing the thin film, so that the thinned wafer curves to the selected radius of curvature.

8. An X-ray optic, comprising:

a wafer of crystalline material having front and rear surfaces and a lattice spacing suitable for reflecting incident X-rays of a given wavelength; and

a thin film deposited on the front surface of the wafer, having compressive forces in the thin film sufficient to impart a concave curvature to the rear surface of the wafer with at least one radius of curvature selected for focusing the incident X-rays.

9. The optic according to claim 8 , wherein the wafer comprises silicon, and wherein the thin film comprises a metal.

10. The optic according to claim 9 , wherein the metal film comprises at least one of tungsten and titanium.

11. The optic according to claim 8 , wherein the thin film comprises stripes of the thin film, the stripes having a thickness, width and spacing selected to create the at least one selected radius of curvature.

12. The optic according to claim 11 , wherein the thickness, width and spacing of the stripes are chosen so as to impart to the wafer a first radius of curvature about a first curvature axis and a second radius of curvature, different from the first radius of curvature, about a second curvature axis.

13. The optic according to claim 11 , wherein the stripes are formed by sputtering the thin film onto the front surface and then etching the thin film.

14. The optic according to claim 8 , wherein the rear surface of the wafer is thinned after depositing the thin film, so that the thinned wafer curves to the selected radius of curvature.

15. An X-ray spectrometer, comprising:

an X-ray source, which is operative to emit a beam of X-rays of a given wavelength;

an X-ray optic, which is configured and positioned to focus the beam of X-rays onto a sample, and which comprises:

a wafer of crystalline material having front and rear surfaces and a lattice spacing suitable for reflecting the X-rays of the given wavelength; and

a thin film deposited on the front surface of the wafer, having compressive forces in the thin film sufficient to impart a concave curvature to the rear surface of the wafer with at least one radius of curvature selected for focusing the X-ray beam.

Assignments (2)
CHANGE OF NAME Recorded Apr 13, 2021
From: JORDAN VALLEY SEMICONDUCTORS LTD.
To: BRUKER TECHNOLOGIES LTD.
Reel/Frame 055994/0565 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2006
From: SHERMAN, DOV
To: JORDAN VALLEY SEMICONDUCTORS LTD.
Reel/Frame 018091/0087 →
Continuity (2)
Provisional Application 6070278300 · Jul 26, 2005
Related Publication 20070025511A1 · Feb 1, 2007