IP Library Patent Application 11492628
Patent Application
App. No. 11/492,628

Coated substrate created by systems and methods for modulation of power and power related functions of PECVD discharge sources to achieve new film properties

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Quick Facts
Patent No.
US None
App. No.
11/492,628
Abstract

A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes creating a substrate by generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.

Claims (42)

1 . A substrate coated with a thin film, the substrate formed by:

generating a first electrical pulse having a first pulse width;

using the first electrical pulse, generating a first density of radicalized species;

disassociating a first portion of a feedstock gas using the first density of radicalized species, thereby creating a first plurality of deposition materials;

depositing the first plurality of deposition materials on the substrate as a first layer;

generating a second electrical pulse having a second pulse width, wherein the second pulse width is different from the first pulse width;

using the second electrical pulse, generating a second density of radicalized species;

disassociating a second portion of a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second plurality of deposition materials; and

depositing the second plurality of deposition materials on the first layer.

2 . A substrate coated with a thin film, the substrate formed by:

generating a plasma having a density of radicalized species, wherein the plasma is generated using a power signal;

disassociating a first portion of a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material;

depositing the first deposition material on the substrate, thereby forming a first layer;

modifying the density of radicalized species by modulating the power signal used to generate the plasma;

disassociating a second portion of the feedstock gas using the radicalized species in the modified density of radicalized species, thereby creating a second deposition material; and

depositing the second deposition material on the first layer, thereby forming a second layer.

3 . The substrate of claim 2 , further formed by:

modifying the density of radicalized species by modulating the power signal used to generate the plasma, thereby creating a third density of radicalized species;

disassociating a third portion of the feedstock gas using the third density of radicalized species, thereby creating a third deposition material; and

depositing the third deposition material on the second layer, thereby forming a third layer.

4 . The substrate of claim 2 , wherein the first layer and the second layer comprise separate layers of deposition material within a film deposited on the substrate.

5 . The substrate of claim 2 , wherein the first layer and the formed second layer comprises a single gradient stack deposited on the substrate.

6 . The substrate of claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises:

modulating an amplitude characteristic of the power signal used to generate the plasma.

7 . The substrate of claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises:

modulating a frequency characteristic of the power signal used to generate the plasma.

8 . The substrate of claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises:

modulating a pulse width characteristic of the power signal used to generate the plasma.

9 . The substrate of claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises:

modulating a pulse position characteristic of the power signal used to generate the plasma.

10 . The substrate of claim 2 , wherein the power signal comprises a high-frequency signal for generating the plasma.

11 . The substrate of claim 2 , wherein the power signal is usable by a high-frequency generator so that the high-frequency generator can generate a high-frequency signal for generating the plasma.

12 . The substrate of claim 11 , wherein the high-frequency signal comprises microwaves.

13 . A substrate coated with a film, the substrate formed by:

generating a first electrical pulse having a first pulse amplitude;

using the first electrical pulse to generate a first density of radicalized species;

disassociating a first portion of a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material;

depositing the first deposition material on the substrate;

generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse amplitude;

using the second electrical pulse to generate a second density of radicalized species;

disassociating a second portion of the feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and

depositing the second plurality of deposition materials on the first deposition material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2008
From: APPLIED FILMS CORPORATION
To: APPLIED MATERIALS, INC.
Reel/Frame 020929/0932 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2006
From: STOWELL, MICHAEL W.
To: APPLIED FILMS CORPORATION
Reel/Frame 018401/0799 →