IP Library Granted Patent US 7,325,457
Granted Patent B2
US 7,325,457 · App. 11/492,961 · Granted Feb 5, 2008

Sensor and sensor module

Assignee: Hitachi, Ltd.
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Quick Facts
Patent No.
US 7,325,457
App. No.
11/492,961
Granted
Feb 5, 2008
Kind
B2
Abstract

A sensor and sensor module with small power consumption and high reliability are disclosed. The sensor includes a capacitor having a capacitance varying with a physical quantity, a capacitance-voltage conversion circuit for converting the capacitance of the capacitor into a voltage, and a control signal generation circuit for generating a plurality of control signals. The capacitor has a frequency-capacitance characteristic with a resonant frequency. In a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency. In a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

Claims (47)

1. A sensor comprising:

a capacitor having a capacitance varying with a physical quantity;

a capacitance-voltage conversion circuit that converts the capacitance of the capacitor into a voltage; and

a control signal generation circuit that generates a plurality of control signals,

wherein the capacitor has a frequency-capacitance characteristic with a resonant frequency,

wherein, in a measurement of the physical quantity, the capacitance of the capacitor is measured with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency, and

wherein, in a self-diagnosis of the sensor, the capacitance of the capacitor is measured with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

2. The sensor of claim 1 , wherein the capacitor comprises:

a fixed electrode; and

a movable electrode arranged to face the fixed electrode with a gap therebetween, the movable electrode being displaced with a variation in the physical quantity.

3. The sensor of claim 1 , wherein the physical quantity is a pressure.

4. The sensor of claim 1 , wherein the capacitor is formed by a surface micro electro mechanical systems (MEMS) process.

5. The sensor of claim 1 , wherein the capacitor and the capacitance-voltage conversion circuit are formed on the same semiconductor substrate.

6. The sensor of claim 1 , further comprising a boosting circuit,

wherein the capacitance of the capacitor is measured under the condition that a bias voltage boosted by the boosting circuit is applied to the capacitor.

7. The sensor of claim 1 , further comprising a heater installed around the capacitor,

wherein the capacitance of the capacitor is measured under the condition that the capacitor is heated by the heater.

8. A sensor comprising:

a capacitor having a capacitance varying with a physical quantity;

a capacitance-voltage conversion circuit that converts the capacitance of the capacitor into a voltage; and

a control signal generation circuit that generates a plurality of control signals,

wherein the capacitor has a frequency-capacitance characteristic with a resonant frequency,

wherein a first measurement is performed to measure the capacitance of the capacitor with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency, and

wherein, when a result of the first measurement is beyond a standard range or a deviation thereof is beyond a standard range, or when the first measurement has been performed a predetermined number of times, a second measurement is performed to measure the capacitance of the capacitor with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

9. The sensor of claim 8 , further comprising a boosting circuit,

wherein, when a result of the second measurement is beyond a standard range, a third measurement is performed to measure the capacitance of the capacitor under the condition that a bias voltage boosted by the boosting circuit is applied to the capacitor.

10. The sensor of claim 9 , further comprising a heater installed around the capacitor,

wherein, when a result of the third measurement is beyond a standard range, a fourth measurement is performed to measure the capacitance of the capacitor under the condition that the capacitor is heated by the heater.

11. A sensor module comprising:

a capacitor having a capacitance varying with a pressure in a tire;

a capacitance-voltage conversion circuit that converts the capacitance of the capacitor into a voltage;

a control signal generation circuit that generates a plurality of control signals; and

a constant voltage source for driving the capacitance-voltage conversion circuit and control signal generation circuit,

wherein the capacitor has a frequency-capacitance characteristic with a resonant frequency,

wherein a first measurement is performed to measure the capacitance of the capacitor with one of the control signals having a first frequency which is much higher or much lower than the resonant frequency, and

wherein, when a result of the first measurement is beyond a standard range and a deviation thereof is beyond a standard range, or when the first measurement has been performed a predetermined number of times, a second measurement is performed to measure the capacitance of the capacitor with another one of the control signals having a second frequency which is equal or close to the resonant frequency.

12. The sensor module of claim 11 , wherein the sensor module has a package structure, the package structure including:

a semiconductor chip on which at least the capacitor and the capacitance-voltage conversion circuit are formed; and

a battery which is the constant voltage source.

13. The sensor module of claim 11 , wherein the capacitor comprises:

a fixed electrode; and

a movable electrode arranged to face the fixed electrode with a gap therebetween, the movable electrode being displaced with a variation in physical quantity.

14. The sensor module of claim 11 , wherein the capacitor is formed by a surface MEMS process.

15. The sensor module of claim 11 , further comprising a boosting circuit,

wherein, when a result of the second measurement is beyond a standard range, a third measurement is performed to measure the capacitance of the capacitor under the condition that a bias voltage boosted by the boosting circuit is applied to the capacitor.

16. The sensor module of claim 15 , further comprising a heater installed around the capacitor,

wherein, when a result of the third measurement is beyond a standard range, a fourth measurement is performed to measure the capacitance of the capacitor under the condition that the capacitor is heated by the heater.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2006
From: FUJIMORI, TSUKASA; YOKOYAMA, NATSUKI; FUKUDA, HIROSHI; HANAOKA, YUKO; AZUMA, TAKASHI
To: HITACHI, LTD.
Reel/Frame 018133/0183 →
Priority Claims (1)
JP 2005-277895 · Sep 26, 2005 · national
Continuity (1)
Related Publication 20070068266A1 · Mar 29, 2007