Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition

1. A method for forming a wire structure, the method comprising:

depositing a copper-containing conductive layer on a lower structure;

forming a photoresist pattern defining a wire structure on the conductive layer;

etching the conductive layer using the photoresist pattern as an etching mask; and

stripping the photoresist pattern using a photoresist stripper composition, comprising:

butyl diglycol in a concentration of between about 50 WT % to about 70 WT %;

an alkylpyrrolidone in a concentration of between about 20 WT % to about 40 WT %;

an organic amine compound in a concentration of between about 1 WT % to about WT %;

aminopropylmorpholine in a concentration of between about 1 WT % to about 5 WT %; and

a mercapto compound in a concentration of between about 0.01 WT % to about 0.5 WT %.

2. The method of claim 1 , wherein the alkylpyrrolidone is N-methylpyrrolidone, and the organic amine compound is diethanolamine.

3. The method of claim 1 , wherein stripping of the photoresist pattern further comprises spraying the photoresist stripper composition on the photoresist pattern.

4. The method of claim 1 , wherein stripping of the photoresist pattern further comprises stripping of the photoresist pattern for between about 60 seconds to about 180 seconds.

5. The method of claim 1 , further comprising removing a residue of the photoresist pattern after the stripping of the photoresist pattern.

6. The method of claim 5 , wherein removing a residue of the photoresist pattern further comprises washing the residue of the photoresist pattern by spraying with deionized water.

7. The method of claim 1 , wherein each of the copper-containing conductive layer and the wire structure comprises a multi-layered structure including a molybdenum layer, a copper layer, and a molybdenum nitride layer.

8. The method of claim 1 , wherein the lower structure comprises one of an insulating material and a semiconductor material.

9. A method for fabricating a thin film transistor, comprising:

forming a gate wire structure on an insulating substrate, wherein forming the gate wire structure includes forming a gate line of the gate wire structure to extend in a first direction and forming a gate electrode connected to the gate line;

forming a data wire structure on the insulating substrate, wherein the forming a data wire structure includes forming the data wire structure to be insulated from the gate wire structure, forming a data line of the data wire structure to extend in a second direction to intersect with the gate line, forming a source electrode connected to the data line, and forming a drain electrode separated from the source electrode,

wherein the forming one of the gate wire structure and the data wire structure comprises:

depositing a copper-containing conductive layer on a lower structure;

forming a photoresist pattern defining one of the gate wire structure and the data wire structure on the conductive layer;

etching the conductive layer using the photoresist pattern as an etching mask; and

stripping the photoresist pattern using a photoresist stripper composition, wherein the photoresist stripper composition comprises

butyldiglycol in a concentration of between about 50 WT % to about 70 WT %;

an alkylpyrrolidone in a concentration of between about 20 WT % to about 40 WT %;

an organic amine compound in a concentration of between about 1 WT % to about 10 WT %;

aminopropylmorpholine in a concentration of between about 1 WT % to about 5 WT %, and

a mercapto compound in a concentration of between about 0.01 WT % to about 0.5 WT %.

10. The method of claim 9 , wherein the alkylpyrrolidone is N-methylpyrrolidone, and the organic amine compound is diethanolamine.

11. The method of claim 9 , wherein stripping of the photoresist pattern further comprises spraying the photoresist stripper composition on the photoresist pattern.

12. The method of claim 9 , wherein stripping of the photoresist pattern further comprises stripping of the photoresist pattern for between about 60 to about 180 seconds.

13. The method of claim 9 , further comprising removing a residue of the photoresist pattern after the stripping the photoresist pattern.

14. The method of claim 13 , wherein removing of the residue of the photoresist pattern further comprises, washing the residue of the photoresist pattern by spraying with deionized water.

15. The method of claim 9 , wherein the copper-containing conductive layer has a multi-layered structure composed of a molybdenum layer, a copper layer, and a molybdenum nitride layer, and wherein the wire structure has a multi-layered structure composed of a molybdenum layer, a copper layer, and a molybdenum nitride layer.

16. A method for fabricating a thin film transistor, comprising stripping a photoresist pattern formed on a lower structure using a photoresist stripper composition that comprises:

butyldiglycol in a concentration of between about 50 WT % to about 70 WT %;

N-methylpyrrolidone in a concentration of between about 20 WT % to about 40 WT %;

diethanolamine in a concentration of between about 1 WT % to about 10 WT %;

aminopropylmorpholine in a concentration of between about 1 WT % to about 5 WT %, and

a mercapto compound in a concentration of between about 0.01 WT % to about 0.5 WT %,

wherein the photoresist pattern defines a wire structure formed on the lower structure, and wherein the wire structure is one of a TFT gate wire structure and a TFT data wire structure.

17. The method of claim 16 , wherein the wire structure comprises a molybdenum layer, a copper layer, and a molybdenum nitride layer.

18. The method of claim 16 , further comprising stripping the photoresist pattern for between about 60 seconds to about 180 seconds.