Nitride-based semiconductor light emitting device and manufacturing method thereof

1. A method of manufacturing a nitride-based semiconductor light-emitting device comprising:

providing a support substrate, a reflective layer, a p-type nitride-based semiconductor layer, a light-emitting layer, an n-type nitride-based semiconductor layer and an n-type In a Ga 1-a N (0≦a≦1) layer layered in this order, wherein the light-emitting layer, the n-type nitride-based semiconductor layer and the n-type In a Ga 1-a N (0≦a≦1) layer are formed using a growth substrate;

forming irregularities on a light extraction surface on an upper surface of said n-type In a Ga 1-a N(0≦a≦1) layer by removing the growth substrate; and

providing an n-type electrode on the upper surface of the n-type In a Ga 1-a N (0≦a≦1) layer;

wherein, the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer and functions as a p-type-use electrode; and

the p-type use electrode is a layer or a stack selected from a group consisting of a Pd layer, an Ag layer, a stack of a Pd layer and an Au layer, a stack of an Ag layer and an Au layer, and a stack of a Pd layer, an Ag layer and an Au layer.

2. The method according to claim 1 , wherein the n-type In a Ga 1-a N (0≦a≦1) layer is a silicon-doped nitride-based semiconductor layer.

3. The method according to claim 1 , wherein the support substrate comprises a nickel provided by nickel plating, a metal provided by metal plating, Au, an alloy of Au and Sn, or an electrically-conductive semiconductor.