Semiconductor package featuring metal lid member

1. A semiconductor package comprising:

a package board;

a semiconductor chip mounted on said package board;

a lid member defining a recess for accommodating said semiconductor chip and mounted on said package board so that said semiconductor chip is accommodated in the recess of said lid member;

a first adhesive layer formed on said package board so that a peripheral portion of said lid member is adhered on said package board with said first adhesive layer; and

a second adhesive layer formed on said semiconductor chip so that a central portion of said lid member is adhered to said semiconductor chip with said second adhesive layer,

wherein the following relationship is established:

25μm≦ h−d≦ 300 μm

where: “d” is a depth of the recess of said lid member; and “h” is a sum of a thickness of said semiconductor chip and a thickness of said second adhesive layer.

2. The semiconductor package as set forth in claim 1 , wherein said first adhesive layer is made of a resin-based adhesive which exhibits an elasticity coefficient falling within a range from 1 MPa to 3 GPa.

3. The semiconductor package as set forth in claim 1 , wherein said first adhesive layer is made of a resin-based adhesive which exhibits an elasticity coefficient falling within a range from 1 MPa to 3 GPa in a temperature range from 0 to 125° C.

4. The semiconductor package as set forth in claim 1 , wherein said semiconductor chip is formed as a flip-chip type semiconductor chip having a plurality of metal bumps bonded on a top surface thereof, the mounting of said flip-chip type semiconductor chip being carried out such that the metal bumps are bonded on said package board so as to establish electrical connection therebetween.

5. The semiconductor package as set forth in claim 4 , further comprising a resin seal structure formed to seal said metal bumps between said package board and said flip-chip type semiconductor chip.

6. The semiconductor package as set forth in claim 1 , wherein said lid member is formed as a shaped copper plate by a draw forming process.

7. The semiconductor package as set forth in claim 1 , wherein the peripheral portion of said lid member includes a skirt portion suspended from a peripheral edge of said central portion, and a flange portion extending from said skirt portion.

8. The semiconductor package as set forth in claim 7 , wherein the peripheral portion of said lid member further includes a rim portion projecting from an outer peripheral edge of said flange portion.

9. The semiconductor package as set forth in claim 1 , wherein the peripheral portion of said lid member is formed as a thickened flange portion suspended from a peripheral edge of said central portion.

10. The semiconductor package as set forth in claim 1 , wherein said first adhesive layer is made of a resin-based adhesive selected from the group consisting of a silicone-based adhesive, and an epoxy-based adhesive.

11. The semiconductor package as set forth in claim 1 , wherein said second adhesive layer is made of a resin-based adhesive selected from the group consisting of a silicone-based adhesive, and an epoxy-based adhesive.

12. The semiconductor package as set forth in claim 1 , wherein said second adhesive layer is made of a silver paste.

13. A semiconductor package comprising:

a package board;

a semiconductor chip mounted on said package board;

a molded resin enveloper sealing and encapsulating said semiconductor chip;

a lid member defining a recess for accommodating said molded resin enveloper and mounted on said package board so that said molded resin enveloper is accommodated in the recess of said lid member;

a first adhesive layer formed on said package board so that a peripheral portion of said lid member is adhered on said package board with said first adhesive layer; and

a second adhesive layer formed on said molded resin enveloper so that a central portion of said lid member is adhered to said molded resin enveloper with said second adhesive layer,

wherein the following relationship is established:

25μm≦ h−d ≦300 μm

Herein: “d” is a depth of the recess of said lid member; and “h” is a sum of a thickness of said molded resin enveloper and a thickness of said second adhesive layer.

14. The semiconductor package as set forth in claim 13 , wherein said first adhesive layer is made of a resin-based adhesive which exhibits an elasticity coefficient falling within a range from 1 MPa to 3 GPa.

15. The semiconductor package as set forth in claim 13 , wherein said first adhesive layer is made of a resin-based adhesive which exhibits an elasticity coefficient falling within a range from 1 MPa to 3 GPa in a temperature range from 0 to 125° C.

16. The semiconductor package as set forth in claim 13 , wherein said lid member is formed as a shaped copper plate by a draw forming process.

17. The semiconductor package as set forth in claim 13 , wherein the peripheral portion of said lid member includes a skirt portion suspended from a peripheral edge of said central portion, and a flange portion extending from said skirt portion.

18. The semiconductor package as set forth in claim 17 , wherein the peripheral portion of said lid member further includes a rim portion projecting from an outer peripheral edge of said flange portion.

19. The semiconductor package as set forth in claim 13 , wherein the peripheral portion of said lid member is formed as a thickened flange portion suspended from a peripheral edge of said central portion.