Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction of a predetermined axis. Each predetermined plane is inclined to the predetermined axis. Each substrate has a mirror polished primary surface. The primary surface has a first area and a second area. The first area is between an edge of the substrate and a line 3 millimeter away from the edge. The first area surrounds the second area. An axis perpendicular to the primary surface forms an off-angle with c-axis of the substrate. The off-angle takes a minimum value at a first position in the first area of the primary surface.
1. A gallium nitride substrate of single crystal gallium nitride, the gallium nitride substrate comprising:
a primary surface, the primary surface having a first area and a second area, an off-angle formed by c-axis of the gallium nitride substrate with an axis perpendicular to the primary surface being greater than zero over the first and second areas, and a c-face of the single crystal gallium nitride of the gallium nitride substrate being concave or convex,
wherein the curvature radius R of C-plane of the single crystal gallium of the gallium nitride substrate is equal to or more than 1.5 meters.
2. The gallium nitride substrate according to claim 1 , wherein the off-angle takes a minimum in the first area.
3. The gallium nitride substrate according to claim 1 , wherein the off-angle includes a value greater than zero on a curve on the primary surface, the curve terminates on an edge of the primary surface, and the off-angle takes the same value on the curve, and the curve starts one position on the edge of the primary surface and terminates on another position on the edge of the primary surface.
4. The gallium nitride substrate according to claim 1 , wherein a maximum distance between one position and another position on the edge of the primary surface is equal to or greater than 10 millimeters.
5. The gallium nitride substrate according to claim 1 , wherein an area of the primary surface is equal to or greater than an area of 2-inch diameter circle.
6. The gallium nitride substrate according to claim 1 , wherein the off-angle is equal to or greater than 0.15 degrees all over the second area.
7. The gallium nitride substrate according to claim 1 , wherein the off-angle is equal to or greater than 0.3 degrees all over the second area.
8. The gallium nitride substrate according to claim 1 , wherein the off-angle is less than 2 degrees all over the second area.
9. The gallium nitride substrate according to claim 1 , wherein the off-angle is equal to or less than 0.7 degrees all over the second area.
10. The gallium nitride substrate according to claim 1 , wherein gallium nitride substrate is formed by cutting an ingot of single crystal gallium nitride.
11. A gallium nitride substrate of single crystal gallium nitride, the gallium nitride substrate comprising:
a primary surface, the primary surface having a first area and a second area, an off-angle formed by c-axis of the gallium nitride substrate with an axis perpendicular to the primary surface being greater than zero over the first and second areas, and a c-face of the single crystal gallium nitride of the gallium nitride substrate being concave or convex,
wherein the primary surface is not perpendicular to a c-axis of the gallium nitride substrate over the entire primary surface.
12. The gallium nitride substrate according to claim 11 , wherein the off-angle takes a minimum in the first area.
13. The gallium nitride substrate according to claim 11 , wherein the off-angle includes a value greater than zero on a curve on the primary surface, the curve terminates on an edge of the primary surface, and the off-angle takes the same value on the curve, and the curve starts one position on the edge of the primary surface and terminates on another position on the edge of the primary surface.
14. The gallium nitride substrate according to claim 11 , wherein a maximum distance between one position and another position on the edge of the primary surface is equal to or greater than 10 millimeters.
15. The gallium nitride substrate according to claim 11 , wherein an area of the primary surface is equal to or greater than an area of 2-inch diameter circle.
16. The gallium nitride substrate according to claim 11 , wherein the off-angle is equal to or greater than 0.15 degrees all over the second area.
17. The gallium nitride substrate according to claim 11 , wherein the off-angle is equal to or greater than 0.3 degrees all over the second area.
18. The gallium nitride substrate according to claim 11 , wherein the off-angle is less than 2 degrees all over the second area.
19. The gallium nitride substrate according to claim 11 , wherein the off-angle is equal to or less than 0.7 degrees all over the second area.
20. An epitaxial substrate comprising:
a gallium nitride substrate according to any one of claims 2 - 9 , 12 - 19 , or 10 ;
a first conductive type Al X1 In Y1 Ga 1-X1-Y1 N provided on the gallium nitride substrate, where 0≦X1≦1, 0≦Y1≦1, 0≦X1+Y1<1;
an active region including an Al X2 In Y2 Ga 1-X21-Y2 provided on the gallium nitride substrate, where 0<X2<1, 0<Y2<1, 0<X2+Y2<1; and
a second conductive type Al X3 In Y3 Ga 1-X3-Y3 N provided on the gallium nitride substrate, where 0≦X3<1, 0≦Y3≦1, 0≦X3+Y3≦1.
21. An epitaxial substrate comprising:
a gallium nitride substrate according to any one of claims 2 - 9 , 12 - 19 , 20 or 10 ; and
one or more III-group nitride semiconductor film provided on the gallium nitride substrate.
22. A gallium nitride substrate of single crystal gallium nitride, the gallium nitride substrate comprising:
a primary surface, the primary surface having a first area and a second area, an off-angle formed by c-axis of the gallium nitride substrate with an axis perpendicular to the primary surface being greater than zero over the first and second areas, and a c-face of the single crystal gallium nitride of the gallium nitride substrate being concave or convex,
wherein lines indicating the same off-angles are defined as concentric circle arcs on the primary surface.