Patent Assignment
Reel/Frame 065817/0967
Nunc Pro Tunc Assignment
Recorded: 2023-12-07
Pages: 6
Assignor
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Executed: 2023-11-27
Assignee
MITSUBISHI CHEMICAL CORPORATION
1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, 100-8251, JAPAN
Covered Properties
(52)
Nitride-Based Compound Semiconductor, Method of Cleaning a Compound Semiconductor, Method of Producing the Same, and Substrate
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Method of Producing Iii-Nitride Substrate
Nitride Gallium Semiconductor Substrate and Nitride Semiconductor Epitaxial Substrate
Fabrication Method and Fabrication Apparatus of Group Iii Nitride Crystal Substance
Method of Producing Iii-Nitride Substrate
Method of Manufacturing Nitride Substrate for Semiconductors
Damage Evaluation Method of Compound Semiconductor Member, Production Method of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member and Gallium Nitride Compound Semiconductor Membrane
Gallium Nitride Substrate and Gallium Nitride Layer Formation Method
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Group Iii Nitride Semiconductor Crystal Substrate and Semiconductor Device
Group Iii Nitride Crystal and Method for Surface Treatment Thereof, Group Iii Nitride Stack and Manufacturing Method Thereof, and Group Iii Nitride Semiconductor Device and Manufacturing Method Thereof
Fabrication Method and Fabrication Apparatus of Group Iii Nitride Crystal Substance
Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them
Gallium Nitride Substrate
Gan Single Crystal Substrate and Method of Manufacturing Thereof and Gan-Based Semiconductor Device and Method of Manufacturing Thereof
Method of Fabricating Single Crystal Gallium Nitride Semiconductor Substrate, Nitride Gallium Semiconductor Substrate and Nitride Semiconductor Epitaxial Substrate
Nitride Semiconductor Substrate, Semiconductor Device, and Methods for Manufacturing Nitride Semiconductor Substrate and Semiconductor Device
Group Iii Nitride Crystal Substrate, Epilayer-Containing Group Iii Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Method of Storing Gan Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture
Group Iii Nitride Semiconductor Substrate and Manufacturing Method Thereof
Group Iii Nitride Substrate, Semiconductor Device Comprising the Same, and Method for Producing Surface-Treated Group Iii Nitride Substrate
Fabrication Method and Fabrication Apparatus of Group Iii Nitride Crystal Substance
Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them
Method of Fabricating Single Crystal Gallium Nitride Semiconductor Substrate, Nitride Gallium Semiconductor Substrate and Nitride Semiconductor Epitaxial Substrate
Freestanding Iii-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate
Group Iii Nitride Substrate, Epitaxial Layer-Provided Substrate, Methods of Manufacturing the Same, and Method of Manufacturing Semiconductor Device
Gan Substrate, Epitaxial Layer-Provided Substrate, Methods of Manufacturing the Same, and Method of Manufacturing Semiconductor Device
Substrate, Epitaxial Layer Provided Substrate, Method for Producing Substrate, and Method for Producing Epitaxial Layer Provided Substrate
Method of Preparing and Storing Gan Substrate, Prepared and Stored Gan Substrate, and Semiconductor Device and Method of Its Manufacture
Method of Manufacturing Nitride Substrate for Semiconductors
Group Iii Nitride Substrate, Semiconductor Device Comprising the Same, and Method for Producing Surface-Treated Group Iii Nitride Substrate
Group Iii Nitride Substrate, Semiconductor Device Comprising the Same, and Method for Producing Surface-Treated Group Iii Nitride Substrate
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, and Semiconductor Device
Group Iii Nitride Semiconductor Substrate Having a Sulfide in a Surface Layer
Gallium Nitride Semiconductor Substrate with Semiconductor Film Formed Therein
Substrate, Epitaxial Layer Provided Substrate, Method for Producing Substrate, and Method for Producing Epitaxial Layer Provided Substrate
Gallium Nitride Semiconductor Substrate
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Method for Producing Group III Nitride Crystal
GaN Single Crystal Substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)
Group Iii Nitride Crystal Substrate, Epilayer-Containing Group Iii Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Group Iii Nitride Crystal Substrates and Group Iii Nitride Crystal
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, and Semiconductor Device
Gallium Nitride Semiconductor Substrate with Semiconductor Film Formed Therein
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, and Semiconductor Device
Gallium Nitride Semiconductor Substrate with Semiconductor Film Formed Therein
Nitride Crystal, Nitride Crystal Substrate, Epilayer-Containing Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Group Iii Nitride Crystal Substrate, Epilayer-Containing Group Iii Nitride Crystal Substrate, Semiconductor Device and Method of Manufacturing the Same
Gallium Nitride Crystal Substrate
Related Assignments
(13)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 17, 2006
From: HACHIGO, AKIHIRO; NISHIRUA, TAKAYUKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 017907/0121 →
Assignment of Assignor's Interest
Jun 23, 2006
From: ISHIBASHI, KEIJI; KAJI, TOKIKO; NAKAHATA, SEIJI; NISHIURA, TAKAYUKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018011/0102 →
Assignment of Assignor's Interest
Jul 14, 2006
From: MATSUMOTO, NAOKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018058/0694 →
Assignment of Assignor's Interest
Aug 3, 2006
From: UENO, MASAKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018133/0126 →
Corrective Assignment to Correct the Name of Second Conveying Party Previously Recorded on Reel 017907 Frame 0121. Assignor(S) Hereby Confirms the Second Conveying Party's Name Should Appear as: Takayuki Nishiura.
Oct 4, 2006
From: HACHIGO, AKIHIRO; NISHIURA, TAKAYUKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018345/0554 →
Assignment of Assignor's Interest
Dec 22, 2006
From: KASAI, HITOSHI; OKAHISA, TAKUJI; FUJITA, SHUNSUKE; MATSUMOTO, NAOKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018737/0148 →
Corrective Assignment to Correct the Address of the Receiving Parties Previously Recorded on Reel 018011 Frame 0102. Assignor(S) Hereby Confirms the the Address of the Receiving Party Is 5-33, Kitahama 4-Chome, Chuo-Ku, Osaka-Shi, Osaka, 541-0041 Japan.
Jan 18, 2007
From: ISHIBASHI, KEIJI; KAJI, TOKIKO; NAKAHATA, SEIJI; NISHIURA, TAKAYUKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 018770/0626 →
Assignment of Assignor's Interest
Jun 10, 2008
From: NAKAHATA, SEIJI; SATO, FUMITAKA; MIURA, YOSHIKI; KOUKITU, AKINORI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 021072/0094 →
Assignment of Assignor's Interest
Nov 18, 2008
From: OKAHISA, TAKUJI; KAWASE, TOMOHIRO; UEMURA, TOMOKI; NISHIOKA, MUNEYUKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 021854/0693 →
Assignment of Assignor's Interest
Apr 29, 2009
From: ISHIBASHI, KEIJI; MATSUMOTO, NAOKI; IRIKURA, MASATO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 022612/0903 →
Assignment of Assignor's Interest
May 19, 2010
From: ISHIBASHI, KEIJI; NAKANISHI, FUMITAKE
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 024410/0222 →
Assignment of Assignor's Interest
Jul 1, 2010
From: HACHIGO, AKIHIRO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 024624/0364 →
Assignment of Assignor's Interest
Jul 20, 2010
From: FUJIWARA, SHINSUKE; UEMATSU, KOJI; OSADA, HIDEKI; NAKAHATA, SEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 024712/0690 →