Gallium nitride substrate and gallium nitride layer formation method
There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×10 6 Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.
1. A method for forming a gallium nitride layer of which resistivity is 1×10 6 Ω·cm or more, comprising steps of:
forming a gallium nitride layer containing iron on a substrate; and
after forming the gallium nitride layer heating said gallium nitride layer formed on said substrate,
wherein said gallium nitride layer is heated at 800° C. or higher for five minutes or more, and wherein said gallium nitride layer is cooled at between 2 and 60° C./minute of a temperature falling rate.
2. The method for forming a gallium nitride layer according to claim 1 , wherein a surface of said gallium nitride layer is inclined 0.03° or more from a (0001) plane of said gallium nitride layer.
3. The method for forming a gallium nitride layer according to claim 1 , wherein said gallium nitride layer contains carbon.
4. The method for forming a gallium nitride layer according to claim 1 , wherein a dislocation density of said gallium nitride layer is 1×10 7 cm −2 or less.