Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface.
1. A group III nitride substrate, comprising a surface layer, wherein the surface layer contains carbon of 3 at. % to 25 at. % and a p-type metal element of 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 .
2. The group III nitride substrate according to claim 1 , wherein the surface layer further contains an insulating metal element of 1×10 10 atoms/cm 2 to 100×10 10 atoms/cm 2 .
3. A semiconductor device, comprising:
the group III nitride substrate according to claim 1 ; and
at least one epitaxially grown layer formed on the surface layer of the substrate.