Assignment of Assignor's Interest

Recorded: 2010-09-24 Pages: 2

Assignor

ISHIBASHI, KEIJI

Executed: 2010-09-14

Assignee

5-33, KITAHAMA 4-CHOME, CHUO-KU,, OSAKA-SHI, OSAKA, 541-0041, JAPAN

Covered Property (1)

Group Iii Nitride Substrate, Semiconductor Device Comprising the Same, and Method for Producing Surface-Treated Group Iii Nitride Substrate

Patent: 8,030,681 →

Application: 12/934,319 →

Publication: US 2011/0031589

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.