Compound semiconductor substrate, semiconductor device, and processes for producing them
A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×10 10 atoms/cm 2 and not more than 12000×10 10 atoms/cm 2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×10 10 atoms/cm 2 and not more than 12000×10 10 atoms/cm 2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.
1. A compound semiconductor substrate comprised of a Group III nitride and having a surface containing a chloride of not less than 200×10 10 atoms/cm 2 and not more than 12000×10 10 atoms/cm 2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface.
2. The compound semiconductor substrate according to claim 1 , wherein the surface contains the chloride of not less than 300×10 10 atoms/cm 2 and not more than 8000×10 10 atoms/cm 2 in terms of Cl.
3. The compound semiconductor substrate according to claim 1 , wherein the surface contains the oxide of not less than 5.0 at % and not more than 12.0 at % in terms of O.
4. The compound semiconductor substrate according to claim 1 , wherein a surface roughness (RMS) of the surface is not more than 3 nm.
5. The compound semiconductor substrate according to claim 1 , wherein a surface roughness (RMS) of the surface is not more than 1 nm.
6. The compound semiconductor substrate according to claim 1 , wherein the surface has a structure in which low dislocation density regions and high dislocation density regions are alternately arranged.
7. The compound semiconductor substrate according to claim 1 , further comprising an epitaxial layer formed on the surface and comprised of a Group III nitride.
8. The compound semiconductor substrate according to claim 1 , wherein a plane direction of the surface is one of the (0001) plane, (11-20) plane, (10-12) plane, (10-10) plane, (20-21) plane, (10-11) plane, (11-21) plane, (11-22) plane, and (11-24) plane of the wurtzite structure.
9. The compound semiconductor substrate according to claim 1 , wherein the surface has an off-angle of not more than 15° relative to one of the (0001) plane, (11-20) plane, (10-12) plane, (10-10) plane, (20-21) plane, (10-11) plane, (11-21) plane, (11-22) plane, and (11-24) plane of the wurtzite structure.