Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×10 13 , and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10 14 , and a haze level of the surface is not more than 5 ppm.
1. A GaN substrate, wherein a number of chlorine atoms per square centimeter of a surface is not more than 2×10 14 , and a number of silicon atoms per square centimeter of said surface is not more than 3×10 13 , and said chlorine atoms and said silicon atoms adhere to said surface.
2. The GaN substrate according to claim 1 , wherein a surface roughness in Ra is not more than 1 nm,
wherein Ra means arithmetical mean roughness.
3. The GaN substrate according to claim 1 , wherein an affected layer formed on said surface has a thickness of not more than 50 nm.
4. A GaN substrate, wherein a number of chlorine atoms per square centimeter of a surface is not more than 2×10 14 , and a haze level of said surface is not more than 5 ppm, and said chlorine atoms adhere to said surface.
5. The GaN substrate according to claim 4 , wherein a surface roughness in Ra is not more than 1 nm,
wherein Ra means arithmetical mean roughness.
6. The GaN substrate according to claim 4 , wherein an affected layer formed on said surface has a thickness of not more than 50 nm.