Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface.
1. A semiconductor device comprising: a group III nitride substrate comprising a surface layer,
wherein the surface layer contains carbon of 3 at. % to 25 at. % and a p-type metal element of 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 , and
wherein the group III nitride substrate is an n-Type GaN substrate.
2. The semiconductor device according to claim 1 , wherein the semiconductor device comprises an LED.
3. A semiconductor device comprising: a group III nitride substrate comprising a surface layer,
wherein the surface layer contains carbon of 3 at. % to 25 at. % and a p-type metal element of 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 , and
wherein the group III nitride substrate is an insulating GaN substrate.
4. The semiconductor device according to claim 3 , wherein the semiconductor device comprises a HEMT device.