GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)
A GaN single crystal substrate has a main surface with an area of not less than 10 cm 2 , the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10 −5 , the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
1. A GaN single crystal substrate having a main surface with an average roughness Ra of not more than 50 nm, the main surface having an area of not less than 10 cm 2 , said main surface having a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and a half width of an x-ray diffraction peak obtained by x-ray diffraction rocking curve measurement for one of a combination of a (0002) plane and a (20-20) plane, and a combination of a (0002) plane and a (22-40) plane, not being more than 300 arcsec over on an entirety of the main surface.
2. The GaN single crystal substrate according to claim 1 , wherein a distribution of a dislocation density in the main surface is substantially uniform.
3. The GaN single crystal substrate according to claim 1 , wherein a variation of a dislocation density in the main surface is within ±100% with respect to an average dislocation density in the main surface.