Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device includes a lower substrate having wiring patterns formed of a plurality of wirings, semiconductor chips located above the lower substrate and electrically connected to the wirings, an intermediate member which seals the semiconductor chips in columnar form and substantially, and a resin board which substantially covers the entire upper surface of the intermediate member. A thermal expansion coefficient of the resin board and a thermal expansion coefficient of the lower substrate are made approximately identical to each other.
1. A semiconductor device comprising:
a lower substrate having wiring patterns formed of a plurality of wirings;
semiconductor chips located above the lower substrate and electrically connected to the wirings;
an intermediate member which seals the semiconductor chips in columnar form and substantially; and
an upper board which substantially covers the entire upper surface of the intermediate member,
wherein a thermal expansion coefficient of the upper board is approximately identical to that of the lower substrate.
2. The semiconductor device according to claim 1 , wherein the intermediate member has a thermal expansion coefficient smaller than that of the lower substrate.
3. The semiconductor device according to claim 2 , wherein materials for the lower substrate and the upper board are identical to each other.
4. The semiconductor device according to claim 3 wherein thicknesses of the lower substrate and the upper board are approximately identical.
5. The semiconductor device according to claim 4 , wherein the semiconductor chips are plural.
6. The semiconductor device according to claim 5 , wherein the semiconductor chips are electrically connected to the wirings in a flip-chip system.
7. The semiconductor device according to claim 6 , wherein the lower substrate comprises a glass epoxy resin, and the intermediate member comprises an epoxy resin.
8. The semiconductor device according to claim 1 , wherein materials for the lower substrate and the upper board are identical to each other.
9. The semiconductor device according to claim 8 , wherein the intermediate member has a thermal expansion coefficient smaller than that of the lower substrate.
10. The semiconductor device according to claim 9 , wherein thicknesses of the lower substrate and the upper board are approximately identical.
11. The semiconductor device according to claim 10 , wherein the semiconductor chips are plural.
12. The semiconductor device according to claim 11 , wherein the semiconductor chips are electrically connected to the wirings in a flip-chip system.
13. The semiconductor device according to claim 12 , wherein the lower substrate comprises a glass epoxy resin, and the intermediate member comprises an epoxy resin.
14. The semiconductor device according to claim 1 , wherein thicknesses of the lower substrate and the upper board are approximately identical.
15. The semiconductor device according to claim 14 , wherein the intermediate member has a thermal expansion coefficient smaller than that of the lower substrate.
16. The semiconductor device according to claim 15 , wherein materials for the lower substrate and the upper board are identical to each other.
17. The semiconductor device according to claim 16 , wherein the semiconductor chips are plural.
18. The semiconductor device according to claim 17 , wherein the semiconductor chips are electrically connected to the wirings in a flip-chip system.
19. The semiconductor device according to claim 18 , wherein the lower substrate comprises a glass epoxy resin, and the intermediate member comprises an epoxy resin.