IP Library Granted Patent US 8,174,017
Granted Patent B2
US 8,174,017 · App. 11/505,201 · Granted May 8, 2012

Integrating three-dimensional high capacitance density structures

Assignee: Georgia Tech Research Corporation
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Quick Facts
Patent No.
US 8,174,017
App. No.
11/505,201
Granted
May 8, 2012
Kind
B2
Abstract

Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.

Claims (23)

1. Apparatus comprising:

a metal foil on an organic substrate;

nonplanar three-dimensional conducting surfaces formed on the metal foil on the organic substrate;

an insulating thin film conformally formed on the conducting surfaces by chemically reacting the surface while immersed in a solution; and

a second conducting layer conformally coated on top of the insulating thin film to form a capacitor or battery that is integrated as a part of the organic substrate.

2. The apparatus recited in claim 1 wherein the nonplanar surfaces are formed by electroplating conducting structures on the metal foil through a patterned polymer and subsequently removing the polymer.

3. The apparatus recited in claim 1 wherein the three-dimensional conducting surfaces are formed by wet or plasma etching the metal foil.

4. The apparatus recited in claim 1 wherein the three dimensional conducting surfaces are formed on a metal foil comprising titanium, niobium, tantalum, zinc, copper, or aluminum.

5. The apparatus recited in claim 1 wherein the nonplanar conducting surfaces are insulated by reacting with a heated metal ion solution to form the corresponding compound insulating film.

6. The apparatus recited in claim 1 wherein the insulating thin film is formed by a electrochemical oxidation process by anodizing the metal foil in a solution bath.

7. The apparatus recited in claim 1 wherein the insulating thin film is formed by a electrochemical oxidation process by anodizing the metal foil in a electrochemical solution bath.

8. Apparatus comprising:

a metal foil on an organic substrate;

a three-dimensional conducting surface on the metal foil on the organic substrate with organic layers, the three-dimensional conducting surface comprising a partially fused metal particle layer formed by heat treating a layer of metal paste;

an insulating thin film formed on the conducting surface; and

a conducting layer conformally coated on top of the insulating thin film to form a capacitor or battery that is integrated as a part of the organic substrate.

9. The apparatus recited in claim 8 wherein the substrate comprises thin copper, nickel or similar metal foil that is laminated onto another substrate.

10. The apparatus recited in claim 8 wherein the conducting surfaces are formed on a metal foil comprising titanium, niobium, tantalum, zinc, copper, aluminum, nickel, or chromium.

11. The apparatus recited in claim 8 wherein the insulated coating is formed by depositing a metallorganic solution coating that is then heat treated in a controlled oxygen, nitrogen or hydrogen environment.

12. The apparatus recited in claim 8 wherein the three-dimensional electrode is insulated by reacting with an metal ion solution to form the corresponding compounds.

13. The apparatus recited in claim 8 where the insulating thin film is formed on the conducting surface by heat treating the three-dimensional surface in air or nitrogen to form thin dielectric coating layers comprising metal oxides or nitrides.

14. The apparatus recited in claim 8 where the insulating thin film is formed on the conducting surface by chemical or physical vapor deposition thin insulating layers.

15. The apparatus recited in claim 8 where the insulating thin film is formed on the conducting surface by coating a polymer solution layer that is then cured to form the polymer thin film insulating layer.

Assignments (3)
CONFIRMATORY LICENSE Recorded Dec 22, 2010
From: GEORGIA TECH RESEARCH CORPORATION
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 025549/0697 →
CONFIRMATORY LICENSE Recorded Aug 11, 2009
From: GEORGIA TECH RESEARCH CORPORATION
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 023077/0463 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 23, 2006
From: PULUGURTHA, MARKONDEYA RAJ; BALARAMAN, DEVARJAN; ABOTHU, ISAAC R.; TUMMALA, RAO; AYAZI, FARROKH
To: GEORGIA TECH RESEARCH CORPORATION
Reel/Frame 018631/0771 →
Continuity (2)
Provisional Application 60709135 · Aug 17, 2005
Related Publication 20070040204A1 · Feb 22, 2007