Selective reflectivity process chamber with customized wavelength response and method
View Patent ↗A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.
1. A system for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy, said system comprising:
a heating arrangement for heating the treatment object using a heating arrangement radiated energy having a heat source emission spectrum at a heat source operating temperature which heat source emission spectrum is different from said given emission spectrum of the treatment object;
a sensor arrangement for sensing the treatment object radiated energy at a sensing wavelength; and
a chamber arrangement for exposing said treatment object to a portion of the heating arrangement radiated energy while supporting said treatment object within a treatment chamber, at least one portion of said chamber arrangement configured for simultaneously (i) responding in a first way to a majority of the heating arrangement radiated energy that is incident thereon, (ii) responding in a second way to a majority of the treatment object radiated energy that is incident thereon and (iii) responding in a third way at the sensing wavelength.
2. The system of claim 1 wherein said portion of the chamber arrangement is configured for one of reflecting or absorbing said majority of said sensing wavelength that is incident thereon.
3. The system of claim 2 wherein said portion of the chamber arrangement is configured to respond in said first way by reflecting said majority of the heat source radiated energy and to respond in said second way by absorbing said majority of the treatment object radiated energy.
4. The system of claim 1 wherein said portion of the chamber arrangement is configured to reflect said majority of said sensing wavelength that is incident thereon.
5. The system of claim 4 wherein said portion of the chamber arrangement is configured to respond in said first way by reflecting said majority of the heat source radiated energy and to respond in said second way by absorbing said majority of the treatment object radiated energy.
6. In a system for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy, a method comprising:
heating the treatment object using a heating arrangement radiated energy having a heat source emission spectrum at a heat source operating temperature which heat source emission spectrum is different from said given emission spectrum of the treatment object;
sensing the treatment object radiated energy at a sensing wavelength; and
configuring a chamber arrangement for exposing said treatment object to a portion of the heating arrangement radiated energy while supporting said treatment object within a treatment chamber, at least one portion of said chamber arrangement configured for simultaneously (i) responding in a first way to a majority of the heating arrangement radiated energy that is incident thereon, (ii) responding in a second way to a majority of the treatment object radiated energy that is incident thereon and (iii) responding in a third way at the sensing wavelength.
7. The method of claim 6 wherein said portion of the chamber arrangement is configured for one of reflecting or absorbing said majority of said sensing wavelength that is incident thereon.
8. The method of claim 7 wherein said portion of the chamber arrangement is configured to respond in said first way by reflecting said majority of the heat source radiated energy and to respond in said second way by absorbing said majority of the treatment object radiated energy.
9. The method of claim 6 wherein said portion of the chamber arrangement is configured to reflect said majority of said sensing wavelength that is incident thereon.
10. The method of claim 9 wherein said portion of the chamber arrangement is configured to respond in said first way by reflecting said majority of the heat source radiated energy and to respond in said second way by absorbing said majority of the treatment object radiated energy.
11. A system for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy, said system comprising:
a heating arrangement for heating the treatment object using a heating arrangement radiated energy having a heat source emission spectrum at a heat source operating temperature which heat source emission spectrum is different from said given emission spectrum of the treatment object;
a sensor for sensing the treatment object radiated energy emitted by said treatment object at a sensing wavelength; and
a chamber arrangement for exposing said treatment object to the heating arrangement radiated energy while supporting said treatment object within a treatment chamber, at least a first portion of said chamber arrangement configured for reflecting a majority of the sensing wavelength that is incident thereon, and a second, different portion of the chamber arrangement configured for selectively absorbing a majority of the sensing wavelength that is incident thereon.
12. The system of claim 11 wherein said first portion is configured for selectively reflecting said majority of the sensing wavelength incident thereon.
13. The system of claim 11 wherein said treatment object defines first and second opposing major surfaces and said heating arrangement confronts and directly heats only the first major surface of the treatment object and wherein said first and second portions of the chamber arrangement make up different parts of a chamber surface which confront said heating arrangement and the second major surface of the treatment object.
14. The system of claim 13 wherein said sensor senses from said first portion of the chamber arrangement.
15. The system of claim 14 wherein said sensor senses, at least approximately, from a centered position of said first portion of the chamber arrangement.
16. The system of claim 14 wherein said sensor directly confronts the second major surface of the treatment object.
17. In a system for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy, a method comprising:
heating the treatment object using a heating arrangement producing a heating arrangement radiated energy having a heat source emission spectrum at a heat source operating temperature which heat source emission spectrum is different from said given emission spectrum of the treatment object;
providing a sensor for sensing the treatment object radiated energy emitted by said treatment object at a sensing wavelength; and
configuring a chamber arrangement for exposing said treatment object to the heating arrangement radiated energy while supporting said treatment object within a treatment chamber, at least a first portion of said chamber arrangement configured for reflecting a majority of the sensing wavelength that is incident thereon, and at a second, different portion of the chamber arrangement configured for selectively absorbing a majority of the sensing wavelength that is incident thereon.
18. The method of claim 17 wherein said first portion is configured for selectively reflecting said majority of the sensing wavelength incident thereon.
19. The method of claim 17 wherein said treatment object is formed to define first and second opposing major surfaces and said heating arrangement confronts and directly heats only the first major surface of the treatment object and wherein said first and second portions of the chamber arrangement are configured to make up different parts of a chamber surface which confront said heating arrangement and the second major surface of the treatment object.
20. The method of claim 19 including arranging said sensor to sense from said first portion of the chamber arrangement.
21. The method of claim 20 wherein said sensor is arranged for sensing, at least approximately, from a centered position of said first portion of the chamber arrangement.
22. The method of claim 20 wherein said sensor is arranged to directly confront the second major surface of the treatment object.