IP Library › Granted Patent US 7,445,980
Granted Patent B2
US 7,445,980 · App. 11/508,009 · Granted Nov 4, 2008

Method and apparatus for improving stability of a 6T CMOS SRAM cell

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Quick Facts
Patent No.
US 7,445,980
App. No.
11/508,009
Granted
Nov 4, 2008
Kind
B2
Abstract

The present invention is a CMOS SRAM cell comprising two access devices, each access device comprised of a tri-gate transistor having a single fin; two pull-up devices, each pull-up device comprised of a tri-gate transistor having a single fin; and two pull-down devices, each pull-down device comprised of a tri-gate transistor having multiple fins. A method for manufacturing the CMOS SRAM cell, including the dual fin tri-gate transistor is also provided.

Claims (4)

1. A method of forming a six transistor (6T) CMOS SRAM cell, comprising:

forming two N-type access devices, each N-type access device comprised of a tri-gate transistor having a single fin;

forming two P-type pull-up devices, each P-type pull-up device comprised of a tri-gate transistor having a single fin;

forming two N-type pull-down devices, each N-type pull down device comprised of a tri-gate transistor having at least two fins.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →