IP Library Granted Patent US 7,526,602
Granted Patent B2
US 7,526,602 · App. 11/508,291 · Granted Apr 28, 2009

Memory control system and memory control circuit

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Quick Facts
Patent No.
US 7,526,602
App. No.
11/508,291
Granted
Apr 28, 2009
Kind
B2
Abstract

A memory control system includes a first memory for accessing a CPU via an address bus and a data bus, an SDRAM for accessing a CPU via the address bus and the data bus, a SDRAM control circuit for outputting a refresh request to the DRAM and a selection unit for selecting a signal line of the address bus and outputting a signal of the signal line corresponding to the refresh request of the SDRAM control circuit to the SDRAM.

Claims (24)

1. A memory control system comprising:

a first memory coupled to a CPU via an address bus and a data bus;

a SDRAM coupled to a CPU via the address bus and the data bus;

a SDRAM control circuit for outputting a refresh request to the SDRAM; and

a selection unit for selecting a signal line of the address bus and outputting a signal of the signal line corresponding to the refresh request of the SDRAM control circuit to the SDRAM.

2. The memory control system according to claim 1 , wherein the command corresponding to the refresh request is all bank precharge command of the SDRAM.

3. The memory control system according to claim 1 , wherein an address of the SDRAM is determined based on data of the address bus and the signal outputted by the selection unit.

4. A memory control circuit for accessing a first memory and a SDRAM via a bus shared by the first memory and the SDRAM comprising:

a memory control circuit for generating a control signal for the first memory;

a SDRAM control circuit for generating a control signal for the SDRAM; and

a selection unit for selecting a signal line of the bus and outputting a signal of the selected signal line corresponding to a refresh request outputted by the SDRAM control circuit to the SDRAM.

5. The memory control circuit according to claim 4 , further comprising: an output terminal for outputting the signal of the selected signal line corresponding to the refresh request to the SDRAM.

6. The memory control circuit according to claim 5 , wherein the refresh request includes all banks precharge command to the SDRAM.

7. A memory control system comprising:

a first memory control circuit for controlling a first memory;

a SDRAM control circuit for controlling a SDRAM;

a selection unit for selecting a signal line of an address bus from the SDRAM control circuit corresponding to a refresh request to the SDRAM and connecting to the SDRAM; and

an address bus for connecting the first memory with the first memory control circuit and connecting the SDRAM with the SDRAM control circuit.

8. The memory control system according to claim 7 , wherein the memory control circuit comprises an output terminal for outputting the signal of the selected signal line corresponding to the refresh request to the SDRAM.

9. The memory control circuit according to claim 7 , wherein the refresh request includes all banks precharge command to the SDRAM.

10. A memory control system comprising:

a first memory connected to an integrated circuit via a common address bus;

a DRAM connected to the integrated circuit via the common address bus; and

an integrated circuit for outputting a command signal corresponding to a refresh request to the DRAM via a second address bus that is different from the common address bus.

Assignments (2)
CHANGE OF NAME Recorded Nov 4, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025311/0851 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2006
From: KUWABARA, KEIICHI
To: NEC ELECTRONICS CORPORATION
Reel/Frame 018219/0010 →