Synchronous memory device
A synchronous memory device, which includes a read command buffer, a replica circuit, and a latency circuit. The read command buffer provides a read signal in response to a read command. The replica circuit provides a transfer signal whose time difference with respect to the feedback clock signal is substantially identical to a period that it takes a read command buffer to provide the read signal. The latency circuit receives the read signal, and provides a latency signal having a difference of a predetermined time corresponding to CAS latency with respect to the read signal in response to the transfer signal.
1. A synchronous memory device comprising:
a read command buffer providing a read signal in response to a read command;
a replica circuit providing an entry transfer signal in response to a feedback clock signal, the entry transfer signal having a time difference with respect to the feedback clock signal that is substantially identical to a period that it takes the read command buffer to provide the read signal; and
a latency circuit receiving the read signal and the entry transfer signal, and providing to the data output buffer a latency signal having a predetermined time difference corresponding to a column access strobe (CAS) latency with respect to the read signal in response to the entry transfer signal,
wherein the entry transfer signal is a delayed signal of the feedback clock signal.
2. The synchronous memory device as set forth in claim 1 , wherein the latency circuit includes a plurality of flip-flop circuits connected in series, and wherein a first flip-flop circuit of the plurality of flip-flop circuits that receives the read signal operates in response to the transfer signal.
3. The synchronous memory device as set forth in claim 2 , wherein the latency circuit includes a plurality of switches which are connected to input and/or output terminals of the plurality of flip-flop circuits, respectively, and are turned on in response to the CAS latency signal.