Method for manufacturing semiconductor laser device and semiconductor laser device
View Patent ↗An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, slope efficiency, device life time and the like can be presented. A method for manufacturing a semiconductor laser device according to the present invention comprises: forming partially a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of the semiconductor substrate; and forming a multiple-layered film by forming an epitaxial layer on a surface of the diffraction grating. The operation of forming the diffraction grating includes an operation of forming the diffraction grating so that a width of the diffraction grating in a direction that is orthogonal to a cavity direction of the semiconductor laser device is presented as a width equal to or longer than a sum of a mesa width and 30 μm.
1. A method for manufacturing a semiconductor laser device, comprising:
forming a diffraction grating on a surface of a semiconductor substrate or on a film on the surface of said semiconductor substrate so that a width of said diffraction grating in a direction that is orthogonal to a cavity direction of said semiconductor laser device is a width equal to or longer than a sum of a mesa width and 30 μm;
forming a multiple-layered film on a surface of said diffraction grating; and
forming the mesa parallel to the cavity direction by partially removing said multiple-layered film and partially removing said diffraction grating so that at least a substantially-central portion of said diffraction grating is remained, after said forming said multiple-layered film,
wherein said forming the multiple-layered film includes forming an active layer on the whole surface of said diffraction grating.
2. The method for manufacturing the semiconductor laser device according to claim 1 , wherein the width of said diffraction grating is equal to or longer than the sum of the mesa width and 40 μm.
3. The method for manufacturing the semiconductor laser device according to claim 1 , wherein said forming said diffraction grating includes forming said diffraction grating on the surface of said film having the active layer formed on said semiconductor substrate via an electron beam exposure process.