System, method and apparatus for improved electrical-to-optical transmitters disposed within printed circuit boards
View Patent ↗The present invention provides a system, method and apparatus for improved electrical-to-optical transmitters ( 100 ) disposed within printed circuit boards ( 104 ). The heat sink ( 110, 200 ) is a thermal conductive material disposed within a cavity ( 102 ) of the printed circuit board ( 104 ) and is thermally coupled to a bottom surface ( 112 ) of the electrical-to-optical transmitter ( 100 ). A portion of the thermal conductive material extends approximately to an outer surface ( 120, 122 or 124 ) of a layer ( 114, 116 or 118 ) of the printed circuit board ( 104 ). The printed circuit board may comprise a planarized signal communications system or an optoelectronic signal communications system. In addition, the present invention provides a method for fabricating the heat sink wherein the electrical-to-optical transmitter disposed within a cavity of the printed circuit board is fabricated. New methods for flexible waveguides and micro-mirror couplers are also provided.
1. A method for fabricating an optical waveguide circuit comprising the steps of:
providing a waveguide layer;
laminating the top of the waveguide layer with a metallic foil;
patterning the metallic foil to form top electrical pads for one or more electrical-to-optical transmitters;
forming micro vias and bonding devices on the waveguide layer;
fabricating the electrical-to-optical transmitter(s) in the micro via(s); and
creating a heat sink within the micro via(s) for the electrical-to-optical transmitters by electroplating a metallic film on the back side of the electrical-to-optical transmitters.
2. The method as recited in claim 1 , wherein the waveguide layer is fabricated using a soft molding process.
3. An optical waveguide circuit fabricated in accordance with the method of claim 1 .
4. The method as recited in claim 1 , wherein the optical waveguide circuit is disposed within a printed circuit board, a planarized signal communications system or an optoelectronic signal communications system.
5. The method as recited in claim 1 , wherein at least a portion of the metallic film extends approximately to an opening of the micro via.
6. The method as recited in claim 5 , further comprising the step of thermally coupling a cooling device to the portion of the metallic film that extends approximately to the opening of the micro via.
7. The method as recited in claim 5 , wherein the metallic film coats the interior walls of the micro via.
8. The method as recited in claim 5 , wherein the metallic film substantially fills the micro via from the bottom of the electrical-to-optical transmitter to approximately an opening of the micro via.
9. The method as recited in claim 1 , wherein the metallic film is approximately 30 μm in thickness.
10. The method as recited in claim 1 , wherein the metallic film is approximately 10 to 50 μm in thickness.
11. The method as recited in claim 1 , wherein the electrical-to-optical transmitter is between 10 and 250 μm in thickness and the metallic film is between 30 and 250 μm in thickness.
12. The method as recited in claim 1 , wherein the electrical-to-optical transmitter is between 10 and 250 μm in thickness and the metallic film is between 10 and 490 μm in thickness.
13. The method as recited in claim 1 , wherein the electrical-to-optical transmitter comprises a laser, a vertical cavity surface emitting laser, or an edge emitting laser.
14. A method for fabricating an optical waveguide circuit comprising the steps of:
providing a waveguide layer;
laminating the top of the waveguide layer with a metallic foil;
patterning the metallic foil to form top electrical pads for one or more electrical-to-optical transmitters;
forming one or more micro via(s) and bonding device(s) on the waveguide layer;
fabricating the electrical-to-optical transmitter(s) within the micro via(s); and
creating a heat sink within the micro via(s) for the electrical-to-optical transmitters by electroplating a metallic film on the back side of the electrical-to-optical transmitters such that the metallic film extends approximately to an opening of the micro via(s).
15. The method as recited in claim 14 , further comprising the step of thermally coupling a cooling device to the portion of the metallic film extending approximately to the opening of the micro via(s).
16. The method as recited in claim 14 , wherein the metallic film is on interior wall of the micro via or substantially fills the micro via from the bottom of the electrical-to-optical transmitter to approximately an opening of the micro via.
17. The method as recited in claim 14 , wherein the metallic film is approximately 30 μm in thickness.
18. The method as recited in claim 14 , wherein the metallic film is approximately 10 to 50 μm in thickness.
19. The method as recited in claim 14 , wherein the electrical-to-optical transmitter is between 10 and 250 μm in thickness and the metallic film is between 30 and 250 μm in thickness.
20. The method as recited in claim 14 , wherein the electrical-to-optical transmitter is between 10 and 250 μm in thickness and the metallic film is between 10 and 490 μm in thickness.