IP Library Granted Patent US 7,602,231
Granted Patent B2
US 7,602,231 · App. 11/526,060 · Granted Oct 13, 2009

Charge-pump circuit

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Quick Facts
Patent No.
US 7,602,231
App. No.
11/526,060
Granted
Oct 13, 2009
Kind
B2
Abstract

A circuit includes a plurality of stages each including a MOS transistor and a capacitor of which one end is connected to one of a drain and a source of the MOS transistor. The plurality of stages are connected with each other by cascade connection of the MOS transistors. A gate of the MOS transistor is connected electrically to one of the drain and the source thereof in each stage, and a substrate for at least one pair of adjacent MOS transistors are connected electrically to one of the drain and the source of one of the pair. The back bias effect is suppressed, and the layout area is reduced. Further, a plurality of booster capacitors connected in series are provided in succeeding stages, thereby suppressing degradation of breakdown voltage of each capacitor.

Claims (7)

1. A charge-pump circuit comprising a plurality of stages each including a MOS transistor and a capacitor of which one end is connected to one of a drain and a source of the MOS transistor, the plurality of stages being connected with each other by cascade connection of the MOS transistors, wherein:

a gate of the MOS transistor is connected electrically to one of the drain and the source thereof in each stage, a substrate for at least one pair of adjacent MOS transistors is connected electrically to one of the drain and the source of one of the MOS transistors of the at least one pair,

a first well region is formed on the substrate for the at least one pair of adjacent MOS transistors a second well region is formed on the substrate, the first and second well regions are N-type well regions isolated from each other and having the same conductivity type, and the at least one pair of adjacent MOS transistors are PMOS transistors, and the capacitor comprises an N-type depletion MOS transistor:

the capacitor of at least one stage is composed of three or more of the N-type depletion MOS transistors connected in series, and

the N-type depletion MOS transistor of each stage is fabricated by the same process as that for fabricating a MOS transistor for an input/output circuit of an LSI.

2. The charge-pump circuit of claim 1 ,

wherein paired clock signals of which phases are inverse to each other are input to the other ends of the capacitors of successive two stages.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2018
From: PANASONIC CORPORATION
To: CETUS TECHNOLOGIES INC.
Reel/Frame 047855/0799 →
CHANGE OF NAME Recorded Nov 24, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 25, 2007
From: YAMAMOTO, YASUE; AGATA, YASUHIRO; SHIRAHAMA, MASANORI; KAWASAKI, TOSHIAKI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 019208/0105 →