Semiconductor device with a plastic housing composition that includes filler particles and that at least partially embeds a semiconductor chip
View Patent ↗A semiconductor device with plastic housing composition includes an internal wiring that is electrically insulated from the plastic housing composition by an insulation layer. The plastic housing composition has a high thermal conductivity and a low coefficient of expansion, the coefficient of expansion being adapted to the semiconductor chip of the semiconductor device. This is achieved by forming the plastic housing composition with electrically semiconducting and/or electrically conducting filler particles. In particular, this plastic housing composition is advantageously used for semiconductor devices with flip-chip contacts and/or for semiconductor devices which are constructed according to the “universal packaging concept”.
1. A semiconductor device comprising:
at least one semiconductor chip;
an internal wiring structure including conductor tracks and contact pads, wherein the contact pads are electrically connected via the conductor tracks to contact areas of the semiconductor chip;
a plastic housing composition that at least partially embeds the at least one semiconductor chip, the plastic housing composition comprising electrically semiconducting and/or electrically conducting filler particles;
an insulation layer that electrically insulates the internal wiring structure from the plastic housing composition such that the plastic housing composition is not in contact with any of the conductor tracks, contact pads and contact areas that connect the internal wiring structure to the semiconductor chip and wherein the semiconductor chip is in direct contact with the insulation layer that extends over an entire area that defines the semiconductor device.
2. The semiconductor device of claim 1 , wherein the plastic housing composition comprises silicon particles.
3. The semiconductor device of claim 1 , wherein the plastic housing composition comprises carbon fiber particles.
4. The semiconductor device of claim 1 , wherein the plastic housing composition comprises carbon nanotube particles.
5. The semiconductor device of claim 1 , wherein the plastic housing composition comprises carbon fullerenes.
6. The semiconductor device of claim 5 , wherein the carbon fullerenes comprise spherical carbon fullerene particles.
7. The semiconductor device of claim 1 , wherein the plastic housing composition comprises metal particles.
8. The semiconductor device of claim 1 , wherein the plastic housing composition comprises at least one of molybdenum particles and tungsten particles.
9. The semiconductor device of claim 1 , wherein the plastic housing composition comprises silicon particles with an oxide layer.
10. The semiconductor device of claim 1 , wherein the plastic housing composition comprises diamond-coated silicon particles.
11. The semiconductor device of claim 1 , further comprising:
a coplanar area comprising an upper side of the plastic housing composition and an upper side of the at least one semiconductor chip;
wherein the insulation layer comprises an insulating intermediate layer that carries the internal wiring structure, the conductor tracks and contact pads are arranged on the coplanar area, and the contact pads are electrically connected via the conductor tracks to contact areas of the semiconductor chip at the coplanar area.
12. The semiconductor device of claim 1 , wherein an active top side of the semiconductor device is adjacent the insulation layer.
13. The semiconductor device of claim 1 , further comprising:
a heat sink arranged directly upon the plastic housing composition, the heat sink comprising cooling fins facing outward and away from the plastic housing composition.
14. The semiconductor device of claim 1 , wherein a grain diameter of the conducting filler particles varies.
15. The semiconductor device of claim 1 , wherein the conducting filler particles comprise silicon particles coated with a layer comprising at least one of diamond, tungsten and molybdenum.