IP Library Granted Patent US 7,442,928
Granted Patent B2
US 7,442,928 · App. 11/527,522 · Granted Oct 28, 2008

Charged particle beam apparatus

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,442,928
App. No.
11/527,522
Granted
Oct 28, 2008
Kind
B2
Abstract

When a sample includes repeated cells, a scale pattern corresponding to the repeated cells is generated. Next, the scale pattern generated is superimposed on the image of the repeated cells of the sample, thereby identifying a destination cell. Moreover, disposition of the repeated cells of the sample is determined based on positions of at least three ends of the repeated cells. Then, the position of the destination cell is identified from this disposition of the repeated cells. Furthermore, a zoom image is generated by a combination of a zoom based on beam deflection function and a zoom based on software. Then, the image shift is performed by software without displacing a sample stage.

Claims (69)

1. A charged particle beam apparatus, comprising:

an irradiation system for irradiating a sample with a charged particle beam,

a deflection control system for deflecting said charged particle beam,

a detector for detecting a secondary-particle signal emitted from said sample,

an image generation unit for generating a scanning-ion-microscope image of said sample from a signal sent from said detector,

a display apparatus for displaying said image generated by said image generation unit, and

an input apparatus for inputting an instruction from a user, wherein

said deflection control system has beam deflection point resolution which is larger than display resolution by said display apparatus, and, when said sample includes repeated cells,

said image generation unit generates a scale pattern corresponding to said repeated cells, and superimposes said scale pattern on an image of said repeated cells of said sample, thereby identifying a destination cell inputted from said input apparatus.

2. The charged particle beam apparatus according to claim 1 , wherein

said image generation unit extends said scale pattern from a start point of said repeated cells of said sample in a transverse direction and in a longitudinal direction until said scale pattern has reached said destination cell inputted from said input apparatus.

3. The charged particle beam apparatus according to claim 1 , wherein, when position of said destination cell inputted from said input apparatus has been identified,

said image generation unit displays a mark pattern at said identified position such that said mark pattern is superimposed on said identified position.

4. The charged particle beam apparatus according to claim 1 , wherein, when position of said destination cell inputted from said input apparatus has been identified,

said image generation unit machines a marker at said identified position on said sample.

5. The charged particle beam apparatus according to claim 4 , wherein

said irradiation system is a focused-ion-beam irradiation system for irradiating said sample with a focused ion beam,

said machining of said marker being performed by any one of sputter etching, gas-assisted etching, and gas-assisted deposition using said focused ion beam.

6. The charged particle beam apparatus according to claim 1 , wherein

said image generation unit generates a zoom image by a combination of a zoom based on beam deflection function of said deflection control system and a zoom based on software.

7. The charged particle beam apparatus according to claim 1 , wherein

said image generation unit performs an image shift by software without displacing a sample stage.

8. A charged particle beam apparatus, comprising:

an irradiation system for irradiating a sample with a charged particle beam,

a deflection control system for deflecting said charged particle beam,

a detector for detecting a secondary-particle signal emitted from said sample,

an image generation unit for generating an image of said sample from a signal sent from said detector,

a display apparatus for displaying said image generated by said image generation unit, and

an input apparatus for inputting an instruction from a user, wherein

said deflection control system has beam deflection point resolution which is larger than display resolution by said display apparatus, and, when said sample includes repeated cells,

said image generation unit identifies a destination cell from disposition number of said repeated cells of said sample in longitudinal and transverse directions and position of said destination cell, said disposition number and said position being inputted from said input apparatus.

9. The charged particle beam apparatus according to claim 8 , wherein, when said destination cell inputted from said input apparatus has been identified,

said image generation unit machines a marker on said identified destination cell.

10. The charged particle beam apparatus according to claim 9 , wherein

said irradiation system is a focused-ion-beam irradiation system for irradiating said sample with a focused ion beam.

11. The charged particle beam apparatus according to claim 10 , wherein

said machining of said marker is performed by any one of sputter etching, gas-assisted etching, and gas-assisted deposition using said focused ion beam.

12. The charged particle beam apparatus according to claim 9 , wherein

said irradiation system is a focused-electron-beam irradiation system for irradiating said sample with a focused electron beam.

13. The charged particle beam apparatus according to claim 12 , wherein

said machining of said marker is performed by gas-assisted deposition using said focused electron beam.

14. The charged particle beam apparatus according to claim 8 , wherein

said irradiation system includes a focused-ion-beam irradiation system for irradiating said sample with a focused ion beam, and a scanning-electron-beam irradiation system for irradiating said sample with a scanning electron beam.

15. The charged particle beam apparatus according to claim 8 , further comprising:

a CAD navigation system for performing CAD navigation,

a CAD information database for storing CAD information, and

a device defect-coordinate information database for storing device defect-coordinate information, wherein

a CAD layout pattern is displayed in a manner of being matched to a sample image,

a mark pattern for indicating a defect being displayed in a manner of being superimposed on position of said defect of said CAD layout pattern.

16. The charged particle beam apparatus according to claim 8 , wherein

said image generation unit generates a zoom image by a combination of a zoom based on beam deflection function of said deflection control system and a zoom based on software.

17. The charged particle beam apparatus according to claim 8 , wherein

said image generation unit performs an image shift by software without displacing a sample stage.

18. A method of detecting a specific cell by using a charged particle beam apparatus, said method comprising the steps of:

irradiating a sample with a charged particle beam,

deflecting said charged particle beam,

detecting a secondary-particle signal emitted from said sample,

generating a scanning-ion-microscope image of said sample from said secondary-particle signal,

generating a scale pattern corresponding to repeated cells when said sample includes said repeated cells, and

identifying a destination cell by superimposing said scale pattern on a scanning-ion-microscope image of said repeated cells of said sample.

19. A computer-readable program for allowing a computer to execute said method of detecting said specific cell according to claim 18 .

20. A method of detecting a specific cell by using a charged particle beam apparatus, said method comprising the steps of:

irradiating a sample with a charged particle beam,

deflecting said charged particle beam,

detecting a secondary-particle signal emitted from said sample,

generating a scanning-ion-microscope image of said sample from said secondary-particle signal,

determining disposition of repeated cells of said sample when said sample includes said repeated cells, said disposition being determined based on positions of at least three ends of said repeated cells of said sample, and

identifying position of a destination cell from said disposition of said repeated cells.

21. A computer-readable program for allowing a computer to execute said method of detecting said specific cell according to claim 20 .

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2006
From: OHNISHI, TSUYOSHI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 018359/0940 →