Method for manufacturing semiconductor device and epitaxial growth equipment

1. A method for manufacturing a semiconductor device comprising steps of:

forming a trench on a main surface of a silicon substrate;

forming a first epitaxial film on the main surface of the silicon substrate and in the trench by using a mixed gas of a silicon source gas and a halide gas so that the trench is filled with the first epitaxial film; and

forming a second epitaxial film on the first epitaxial film by using another mixed gas of the silicon source gas and the halide gas,

wherein the step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film growing on the main surface of the silicon substrate,

wherein the step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film growing on the main surface of the silicon substrate,

wherein the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film,

wherein in the step of forming the first epitaxial film, the halide gas is flown with a standard flow rate, which defined as X in slm unit, and the first epitaxial film is grown with a growth rate, which is defined as Y in unit of micron per minute,

wherein the trench has an aspect ratio larger than 10, and

the standard flow rate of the halide gas and the growth rate of the first epitaxial film has a relationship of:

Y< 0.2 X +0.1.

2. The method according to claim 1 ,

wherein in the step of forming the first epitaxial film, the silicon source gas is flown with a first silicon source gas flow rate,

wherein in the step of forming the second epitaxial film, the silicon source gas is flown with a second silicon source gas flow rate,

wherein in the step of forming the first epitaxial film, the first process condition includes a first process temperature,

wherein in the step of forming the second epitaxial film, the second process condition includes a second process temperature, and

wherein the second silicon source gas flow rate is larger than the first silicon source gas flow rate and the second process temperature is higher than the first process temperature so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

3. The method according to claim 2 , further comprising a step of:

polishing a surface of the second epitaxial film on the main surface of the silicon substrate after the step of forming the second epitaxial film.

4. The method according to claim 1 , wherein

in the step of forming the first epitaxial film, the halide gas is flown with a first halide gas flow rate,

in the step of forming the second epitaxial film, the halide gas is flown with a second halide gas flow rate, and

the second halide gas flow rate is smaller than the first halide gas flow rate so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

5. The method according to claim 2 , wherein

in the step of forming the second epitaxial film, the mixed gas includes no halide gas so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

6. The method according to claim 1 ,

wherein in the step of forming the first epitaxial film, the first process condition includes a first process temperature and a first process pressure,

wherein in the step of forming the second epitaxial film, the second process condition includes a second process temperature and a second process pressure, and

wherein the second process temperature is higher than the first process temperature and the second process pressure is higher than the first process pressure so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

7. The method according to claim 1 ,

wherein in the step of forming the first epitaxial film, the silicon source gas is flown with a first silicon source gas flow rate,

wherein in the step of forming the second epitaxial film, the silicon source gas is flown with a second silicon source gas flow rate,

wherein in the step of forming the first epitaxial film, the first process condition includes a first process pressure,

wherein in the step of forming the second epitaxial film, the second process condition includes a second process pressure, and

wherein the second process pressure is higher than the first process pressure and the second silicon source gas flow rate is larger than the first silicon source gas flow rate so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

8. The method according to claim 2 , wherein

in the step of forming the first epitaxial film, the first epitaxial film is formed by a low pressure CVD method, and

in the step of forming the second epitaxial film, the second epitaxial film is formed by the low pressure CVD method.

9. The method according to claim 2 , wherein

in the step of forming the first epitaxial film, the first epitaxial film is formed by a low pressure CVD method, and

in the step of forming the second epitaxial film, the second epitaxial film is formed by an atmospheric pressure CVD method.

10. The method according to claim 2 , wherein

the step of forming the first epitaxial film is continuously switched to the step of forming the second epitaxial film in such a manner that at least one parameter selected from a group consisting of a halide gas flow rate, a silicon source gas flow rate, a process temperature and a process pressure is gradually changed so that the second growth rate of the second epitaxial film is larger than the first growth rate of the first epitaxial film.

11. The method according to claim 2 , further comprising a step of:

monitoring a surface temperature of the first epitaxial film from a main surface side of the silicon substrate by using a pyrometer, wherein

the step of forming the first epitaxial film is switched to the step of forming the second epitaxial film when an output signal of the pyrometer at a predetermined monitoring temperature becomes substantially constant.

12. The method according to claim 2 , wherein

the halide gas is a hydrogen chloride gas, a chlorine gas, a fluorine gas, a chlorine trifluoride gas, a hydrogen fluoride gas or a hydrogen bromide gas.

13. The method according to claim 2 , wherein

the silicon source gas is a mono-silane gas, a di-silane gas, a di-chloro-silane gas, or a tri-chloro-silane gas.

14. The method according to claim 2 , wherein

the trench has a bottom and a side surface,

the bottom of the trench includes a (110)-crystal surface, and

the side surface of the trench includes a (111)-crystal surface.

15. The method according to claim 2 , wherein

the trench has a bottom and a side surface,

the bottom of the trench includes a (100)-crystal surface, and

the side surface of the trench includes a (100)-crystal surface.

16. The method according to claim 1 , wherein

the trench has an aspect ratio equal to or larger than 10 and smaller than 20, and

the standard flow rate of the halide gas and the growth rate of the first epitaxial film has a relationship of:

Y< 0.2 X +0.05.

17. The method according to claim 1 , wherein

the trench has an aspect ratio equal to or larger than 20, and

the standard flow rate of the halide gas and the growth rate of the first epitaxial film has a relationship of:

Y<0.2X.

18. The method according to claim 2 , wherein

the silicon substrate has a first conductive type,

the trench includes a plurality of grooves in the silicon substrate,

the silicon substrate between adjacent two grooves has a width, which is larger than a width of the grooves,

the first epitaxial film has a second conductive type, and

the first epitaxial film has an impurity concentration higher than that of the silicon substrate.

19. The method according to claim 18 , wherein

in the step of forming the first epitaxial film, a growth rate of the first epitaxial film near an opening of the grooves is smaller than a growth rate of the first epitaxial film in the grooves.

20. The method according to claim 18 , wherein

the width of the groove is defined as W,

the width of the silicon substrate between adjacent two grooves is defined as L,

the impurity concentration of the silicon substrate is defined as N 1 ,

the impurity concentration of the first epitaxial film is defined as N 2 ,

the width of the groove, the width of the silicon substrate, the impurity concentration of the silicon substrate and the impurity concentration of the first epitaxial film have a relationship of:

N 2× W=N 1× L.