Method for making a composite substrate and composite substrate according to the method

1. A method for fabricating electronic components using a composite substrate, comprising:

removing a layer comprising a binary or ternary material which has a crystalline form that is both non-cubic and also semi-polar from the upper face of a donor substrate, wherein the donor substrate is a bulk substrate comprising the binary or ternary material having a crystalline form that is non-cubic and that is semi-polar;

transferring the removed layer onto a receiving substrate without reducing a surface roughness of the removed layer prior to transferring the removed layer onto the receiving substrate from the donor substrate;

depositing at least one additional layer of semiconductor material by epitaxy on the transferred layer on the receiving substrate; and

fabricating electronic components using the at least one additional layer of semiconductor material while the at least one additional layer of semiconductor material remains bonded to the receiving substrate.

2. The method of claim 1 , wherein the binary or ternary material of the semi-polar material comprises a nitride compound.

3. The method of claim 1 , wherein the receiving substrate comprises a material with a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the binary or ternary material of the semi-polar material.

4. The method of claim 1 , wherein the receiving substrate comprises a material with an isotropic thermal expansion coefficient between 0.6 times and 1.6 times the thermal expansion coefficient of binary or ternary material of the semi-polar material.

5. The method of claim 1 , further comprising:

providing a substrate having a crystalline structure suitable for growing a semi-polar material; and

depositing by epitaxy a layer of the binary or ternary material with a crystalline form that is both non-cubic and semi-polar.

6. The method of claim 1 , wherein removing the layer further comprises:

implanting ions or gas species through the upper face of the donor substrate so as to form a buried zone of embrittlement therein; and

fracturing the embrittlement zone so as to detach the layer from the donor substrate.

7. The method of claim 1 , wherein the receiving substrate comprises c-plane sapphire, or mono-c-plane SiC, or c-plane GaN, or c-plane AlN, or polycrystalline AlN, or polycrystalline SiC.

8. The method of claim 1 , wherein transferring further comprises bonding the removed layer to the receiving substrate, and wherein the bonding further comprises applying a layer of a bonding interface material onto the surfaces of either one or both of the removed layer and the receiving substrate that are to be bonded.

9. The method of claim 8 , wherein the bonding interface material comprises insulating material, or SiO 2 , or Si 3 N 4 , or organic material, or polyimides, or metals, or oxides, or sealing material, or Pd 2 Si, or WSi 2 , or SiAu, or PdIn.