Semiconductor device and fabrication method thereof
View Patent ↗A semiconductor device includes a semiconductor chip having electrode pads, and a rewiring pattern having interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes columnar electrodes each of which has a main body section and a protrusion section, and a sealing section which has a top face having a height the same as the top faces of the protrusion sections. The semiconductor device also includes solder balls formed on the protrusion sections. The semiconductor device also has trenches in the sealing section. Each trench has a depth which reaches the boundary between the main body and protrusion of the electrode. The side faces of the protrusion section are exposed face defined by the trenches. Each solder ball is electrically connected to the top face and side faces of the protrusion section of each electrode.
1. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and standing in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body section, each said protrusion section having a top face, said main body section having a substantially flat top face, said protrusion section extending perpendicularly upwards from the flat top face of said main body section, and said protrusion section having a cross-sectional diameter in a direction parallel to said one main surface that is smaller than a cross-sectional diameter of said main body section in the direction parallel to said one main surface;
a sealing section on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the top face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the top face and said side faces of said protrusion sections,
wherein a cross-sectional shape of said protrusion section and a cross-sectional shape of said main body section in the direction parallel to said one main surface are respectively square and circular.
2. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and standing in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body section, each said protrusion section having a top face, said main body section having a substantially flat top face, said protrusion section extending perpendicularly upwards from the flat top face of said main body section, and said protrusion section having a cross-sectional diameter in a direction parallel to said one main surface that is smaller than a cross-sectional diameter of said main body section in the direction parallel to said one main surface;
a sealing section on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the top face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the to face and said side faces of said protrusion sections,
wherein a cross-sectional shape of said protrusion section and a cross-sectional shape of said main body section in the direction parallel to said one main surface are respectively rectangular and circular.
3. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and extending in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body section, each said protrusion section having a top face, said protrusion section having a cross-sectional diameter in a direction parallel to said one main surface that is smaller than a cross-sectional diameter of said main body section in the direction parallel to said one main surface;
a sealing section which is on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the top face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the top face and said side faces of said protrusion sections,
wherein a cross-sectional shape of said protrusion section and a cross-sectional shape of said main body section in the direction parallel to said one main surface are respectively square and circular.
4. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and extending in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body, section, each said protrusion section having a top face, said protrusion section having a cross-sectional diameter in a direction parallel to said one main surface that is smaller than a cross-sectional diameter of said main body section in the direction parallel to said one main surface;
a sealing section which is on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the top face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the top face and said side faces of said protrusion sections,
wherein a cross-sectional shape of said protrusion section and a cross-sectional shape of said main body section in the direction parallel to said one main surface are respectively rectangular and circular.
5. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and extending in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body section, each said protrusion section having a top face, said protrusion section having a cross-sectional shape in a direction parallel to said one main surface that is different than a cross-sectional shape of said main body section in the direction parallel to said one main surface;
a sealing section which is on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the to face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the top face and said side faces of said protrusion sections,
wherein the cross-sectional shape of said protrusion section is square and the cross-sectional shape of said main body section is circular.
6. A semiconductor device comprising:
a semiconductor chip having two main surfaces;
a plurality of electrode pads on one of the two main surfaces of the semiconductor chip, each of said electrode pads having a top face;
an insulation film on said one main surface of the semiconductor chip such that the top face of each of said electrode pads is exposed;
a rewiring pattern having a plurality of interconnects connected to said electrode pads respectively, and which extend over said insulation film;
a plurality of column-shaped electrodes connected to said plurality of interconnects, respectively and extending in a direction perpendicular to said one main surface, each of said column-shaped electrodes having a main body section connected to one of the interconnects and a protrusion section extending from said main body section, each said protrusion section having a top face, said protrusion section having a cross-sectional shape in a direction parallel to said one main surface that is different than a cross-sectional shape of said main body section in the direction parallel to said one main surface;
a sealing section which is on said rewiring pattern and said insulation film, said sealing section buries said column-shaped electrodes and has a top face having a same height as the top faces of said protrusion sections of said column-shaped electrodes;
a plurality of trench sections in said sealing section, each of said trench sections having a depth from the top face of said sealing section to a boundary between said protrusion section and said main body section such that side faces of each said protrusion sections are exposed by said trench sections; and
a plurality of solder balls, said solder balls being respectively over said protrusion sections such that said solder balls are respectively electrically connected with said column-shaped electrodes by being bonded to the top face and said side faces of said protrusion sections,
wherein the cross-sectional shape of said protrusion section is rectangular and the cross-sectional shape of said main body section is circular.