IP Library Granted Patent US 7,521,384
Granted Patent B2
US 7,521,384 · App. 11/544,189 · Granted Apr 21, 2009

Method and apparatus for peeling surface protective film

Assignee: Tokyo Seimitsu Co., Ltd.
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Quick Facts
Patent No.
US 7,521,384
App. No.
11/544,189
Granted
Apr 21, 2009
Kind
B2
Abstract

A method and an apparatus for peeling a surface protective film attached on the surface of a semiconductor wafer are provided. A heating block is set in proximity to the whole surface of the semiconductor wafer, and the whole surface protective film is heated by the heating block. Thus, the air bubbles existing between the semiconductor wafer and the surface protective film are expanded or swelled, and the adhesion between the semiconductor wafer and the surface protective film is weakened. After that, the surface protective film is peeled from the semiconductor wafer. As a result, a peel starting point can be appropriately formed and damage to the wafer can be prevented.

Claims (23)

1. A surface protective film peeling method for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising the steps of:

setting a heating block in proximity to the whole surface of the semiconductor wafer;

heating the whole surface protective film with the heating block, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or air bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film; and

peeling the surface protective film from the semiconductor wafer.

2. A surface protective film peeling method for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising the steps of:

setting a heating block in proximity to at least a part of the neighborhood of the outer peripheral portion of the semiconductor wafer;

heating the neighborhood of the outer peripheral portion of the surface protective film corresponding to the heating block, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or air bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film; and

peeling the surface protective film from the neighborhood of the outer peripheral portion of the semiconductor wafer heated with the heating block.

3. A surface protective film peeling method for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising the steps of:

feeding a peeling tape onto the surface of the semiconductor wafer;

heating the surface protective film of the semiconductor wafer via the peeling tape by a peeling bar having a heating mechanism built therein, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or air bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film; and

peeling the surface protective film from the semiconductor wafer together with the peeling tape using the peeling bar.

4. A surface protective film peeling apparatus for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising:

a heating block covering the whole surface of the semiconductor wafer;

wherein the whole of the surface protective film is heated by the heating block set in proximity to the whole surface of the semiconductor wafer, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or air bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film, after which the surface protective film is peeled from the semiconductor wafer.

5. A surface protective film peeling apparatus for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising:

a heating block covering at least a part of the neighborhood of the outer peripheral portion of the semiconductor wafer;

wherein the whole of the surface protective film is heated by the heating block set in proximity to the neighborhood of the outer peripheral portion of the semiconductor wafer, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or air bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film, after which the surface protective film is peeled from the neighborhood of the outer peripheral portion of the semiconductor wafer.

6. A surface protective film peeling apparatus for peeling a surface protective film attached on a surface of a semiconductor wafer, comprising:

a feeding means for feeding a peeling tape onto the surface of the semiconductor wafer;

a peeling bar; and

a heating mechanism built in the peeling bar;

wherein the peeling tape is fed onto the surface of the semiconductor wafer, the surface protective film of the semiconductor wafer is heated by the heating mechanism via the peeling tape fed by the feeding means, thereby expanding air bubbles existing between the semiconductor wafer and the surface protective film and/or the bubbles in the adhesive of the surface protective film, and thus weakening the adhesion between the semiconductor wafer and the surface protective film, after which the surface protective film is peeled from the semiconductor wafer together with the peeling tape using the peeling bar.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2007
From: KANAZAWA, MASAKI; AMETANI, MINORU; AKITA, DAISUKE; NEZU, MOTOI
To: TOKYO SEIMITSU CO., LTD.
Reel/Frame 018868/0465 →
Priority Claims (1)
JP 2005-299855 · Oct 14, 2005 · national
Continuity (1)
Related Publication 20070087475A1 · Apr 19, 2007