Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
View Patent ↗When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
1. A method for fabricating a semiconductor device by using a dry etching apparatus having a dual power source capable of independently controlling source power for generating a plasma in a chamber and bias power for drawing ions from the plasma into an object to be etched in the chamber, the method comprising the steps of:
performing etching with respect to the member by placing a substrate having a member containing at least silicon exposed thereat in the chamber, introducing a first process gas into the chamber, generating a first plasma of the first process gas with application of the source power, and drawing ions from the first plasma into the member with application of the bias power;
exhausting the first process gas from the chamber after the step of performing etching with respect to the member and then introducing a second process gas containing at least oxygen into the chamber, while leaving the substrate in the chamber;
oxidizing a damaged layer formed in the member in the step of performing etching with respect to the member by generating a second plasma of the second process gas by applying the source power without applying the bias power, wherein the damaged layer is oxidized by the second plasma; and
removing the oxidized damaged layer by retrieving the substrate from the chamber and cleaning the substrate;
wherein the member is a conductive film formed on the substrate and containing at least silicon, the step of performing etching with respect to the member includes the step of forming a gate electrode composed of the conductive film on the substrate, and the step of oxidizing the damaged layer includes the step of oxidizing the damaged layer formed in a side surface of the gate electrode.
2. The method of claim 1 , wherein the conductive film is a polysilicon film, an amorphous silicon film, or a silicide film.