Apparatus for generating a plurality of beamlets
View Patent ↗The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens array comprising a plurality of lenses, wherein said lens array is located between said charged particle source and said converging means. In this way, it is possible to reduce aberrations of the converging means.
1. An apparatus for generating a plurality of charged particle beamlets, comprising:
a charged particle source, for a diverging charged particle beam generated by said source;
a lens array comprising a plurality of lenses;
splitting means comprising a spatial filter comprising an aperture array, for splitting said charged particle beam in a plurality of charged particle beamlets;
said splitting means being aligned with said lens array for providing each lens with an individual beamlet.
2. The apparatus of claim 1 , wherein the system comprises a converging means for refracting said diverging charged particle beam.
3. The apparatus of claim 2 , wherein said lens array is located between said charged particle source and said converging means.
4. The apparatus of claim 1 , wherein said spatial filter is located between said charged particle source and said lens array to split up said diverging charged particle beam into a plurality of charged particle beamlets.
5. The apparatus of claim 1 , wherein the charged particle beam is an electron beam and said lens array is an array of electrostatic lenses.
6. The apparatus according to claim 1 , wherein said lens array comprises an aperture plate.
7. The apparatus of claim 6 , further comprising means for defining an equipotential surface at a distance from said aperture plate at a different potential than said aperture plate itself.
8. The apparatus of claim 7 , wherein said equipotential lines are defined substantially parallel to said aperture plate.
9. The apparatus of claim 7 , wherein the aperture plate has a electrically conducting surface and means for defining the electrostatic potential of said surface.
10. The apparatus of claim 7 , wherein said means for defining an equipotential surface comprises a plate having a through hole at the location of the beam of beamlets, in particular a circular hole having its center at the optical axis of the charged particle beam.
11. The apparatus of claim 10 , wherein said means for defining an equipotential surface are located between said source and said lens array.
12. The apparatus of claim 10 , wherein said means for defining an equipotential surface are located between said array of converging elements and said converging means.
13. The apparatus of claim 2 , wherein said converging means comprises at least one deflector array with deflectors aligned with the beamlets.
14. The apparatus of claim 2 , wherein said converging means is an electrostatic lens.
15. The apparatus of claim 1 , wherein said charged particle beam is an electron beam.
16. The apparatus of claim 1 , wherein said charged particle beam is an ion beam.
17. A charged particle beam lithography system comprising the apparatus of claim 1 .
18. A substrate processed with the charged particle beam system of claim 1 .
19. A charged particle beam microscopy system comprising the apparatus of claim 1 .
20. The apparatus according to claim 1 , wherein the converging means is adapted for refracting a diverging charged particle beam into a substantially parallel charged particle beam for generating a plurality of substantially parallel charged particle beamlets.
21. The apparatus according to claim 1 , wherein said charged particle source is arranged in a focal plane of said converging means.
22. The apparatus according to claim 1 , wherein the lens array is arranged to project images of said source in the principal plane of said converging means.