Oxide superconductor thick film and method for manufacturing the same
View Patent ↗The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same. An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4 . Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4 , dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.
1. A method for manufacturing an oxide superconductor thick film in such a manner that an oxide superconductor thick film containing Bi, Pb, Sr, Ca and Cu is formed on a surface of a substrate or a base, comprising, burning a first thick film substantially having a composition of Bi 2 Sr 2 Ca 1 Cu 2 O z on the surface of said substrate or said base in an atmosphere at 880° C. to 885° C., and thereafter, forming an oxide superconductor thick film substantially having a composition of (Bi, Pb) 2+a Sr 2 Ca 2 Cu 3 O z (Note: 0<a<0.5) on said first thick film.
2. The method for manufacturing the oxide superconductor thick film according to claim 1 , wherein
the first thick film is formed from a first oxide superconductor paste having a mixing ratio of said composition of Bi 2 Sr 2 Ca 1 Cu 2 O z that is applied on the surface of the substrate or base, is dried, and thereafter is burned, and
the oxide superconductor thick film is formed from a second oxide superconductor paste having a mixing ratio of a composition of (Bi, Pb) 2+a Sr 2 Ca 2 Cu 3 O z (Note: 0<a<0.5) that is applied on a surface of the burned first thick film, is dried, and thereafter is burned.
3. The method for manufacturing the oxide superconductor thick film according to claim 2 , wherein
the oxide superconductor thick film is formed from the second oxide superconductor paste having said mixing ratio of the composition of(Bi, Pb) 2+a Sr 2 Ca 2 Cu 3 O z (Note: 0<a<0.5) that is burned in an atmosphere at 830° C. to 860° C. for 50 to 100 hours.
4. The method for manufacturing the oxide superconductor thick film according to claim 1 , wherein
the first thick film is burned in the atmosphere at 880° C. to 885° C. for 10 to 30 minutes.
5. A method for manufacturing an oxide superconductor thick film in such a manner that an oxide superconductor thick film containing Bi, Pb, Sr, Ca and Cu is formed on a surface of a substrate or a base, comprising, burning a first thick film formed from powders of Bi 2 O 3 , SrCO 3 , CaCO 3 and CuO weighed to have a mole ratio of Bi2212 on the surface of the substrate or the base in an atmosphere at 880° C. to 885° C., and thereafter, forming an oxide superconductor thick film from powders of Bi 2 O 3 , PbO, SrCO 3 , CaCO 3 and CuO on the first thick film.
6. The method for manufacturing the oxide superconductor thick film according to claim 5 , wherein
the first thick film is formed from a first oxide superconductor paste comprising Bi 2 O 3 , SrCO 3 , CaCO 3 and CuO weighed to have a mole ratio of Bi2212 that is applied on the surface of substrate or base, is dried, and thereafter is burned, and
the oxide superconductor thick film is formed from a second oxide superconductor paste comprising Bi 2 O 3 , PbO, SrCO 3 , CaCO 3 and CuO that is applied on a surface of the burned first thick film, is dried, and thereafter is burned.
7. The method for manufacturing the oxide superconductor thick film according to claim 6 , wherein
the oxide superconductor thick film is formed from the second oxide superconductor paste that is burned in an atmosphere at 830° C. to 860° C. for 50 to 100 hours.
8. The method for manufacturing the oxide superconductor thick film according to claim 7 , wherein
the first thick film is burned in the atmosphere at 880° C. to 885° C. for 10 to 30 minutes.