Semiconductor device with solder balls having high reliability
View Patent ↗A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.
1. A semiconductor device comprising:
a substrate;
a solder resist configured to be formed on said substrate and having an opening;
a metal layer configured to be formed on said substrate in said opening;
an alloy layer configured to be formed on said metal layer in said opening; and
a Sn—Ag—Cu-based solder ball configured to be placed on said alloy layer,
wherein said alloy layer comprises an alloy that includes Ni and Zn as essential elements, wherein said metal layer comprises:
a first layer configured to include a copper layer formed on said substrate, and
a second layer configured to include a nickel layer formed on said first layer, wherein said first and second layers are formed inside said opening.
2. The semiconductor device according to claim 1 , wherein said alloy layer essentially consists of Ni and Zn.
3. The semiconductor device according to claim 1 , wherein said alloy layer essentially consists of Ni, Au and Zn.
4. The semiconductor device according to claim 1 , wherein a thickness of said metal layer is in a range of 0.02 pm to 0.3 pm.
5. The semiconductor device according to claim 1 , wherein said metal layer includes:
a first metal layer configured to be composed of Ni,
wherein said alloy layer is formed on said first layer.
6. The semiconductor device according to claim 5 , wherein said alloy layer essentially consists of Ni and Zn.
7. The semiconductor device according to claim 5 , essentially consists of Ni, Au and Zn.