CU WIRING FORMATION METHOD

1 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

subjecting the Cu film to anticorrosive treatment on the surface thereof after the plating; and

annealing the Cu film after the anticorrosive treatment.

2 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

storing the wafer in anon-oxidative atmosphere after the plating; and

annealing the Cu film after the storage of the wafer in the non-oxidative atmosphere.

3 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

removing an oxide film formed on a surface of the Cu film after the plating; and

annealing the Cu film after the removal of the oxide film.

4 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

removing an oxide film formed on a surface of the Cu film after the plating;

subjecting the surface of the Cu film to anticorrosive treatment after the removal of the oxide film; and

annealing the Cu film after the anticorrosive treatment.

5 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

removing an oxide film formed on a surface of the Cu film after the plating;

storing the wafer in a non-oxidative atmosphere after the removal of the oxide film; and

annealing the Cu film after the storage of the wafer in the non-oxidative atmosphere.

6 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

annealing the Cu film after the plating; and

removing an oxide film formed on a surface of the Cu film after the annealing of the Cu film.

7 . The Cu wiring formation method as defined in claim 6 , wherein the oxide film is removed by means of an aqueous solution.

8 . The Cu wiring formation method as defined in claim 7 , wherein the aqueous solution contains an antioxidizing agent.

9 . A Cu wiring formation method comprising the steps of:

forming a Cu film on a wafer by plating;

annealing the Cu film after the plating; and

removing an impurity present in an oxide film formed on a surface of the Cu film after the annealing of the Cu film.

10 . The Cu wiring formation method as defined in claim 9 , wherein the impurity is removed by means of an aqueous solution.

11 . The Cu wiring formation method as defined in claim 10 , wherein the aqueous solution contains an antioxidizing agent.

12 . A Cu wiring formation method, comprising the steps of:

forming a Cu film on a wafer;

annealing the Cu film after the plating; and

oxidizing a surface of the Cu film in an non-aqueous environment after the annealing of the Cu film.