IP Library › Granted Patent US 7,678,194
Granted Patent B2
US 7,678,194 · App. 11/563,830 · Granted Mar 16, 2010

Method for providing gas to a processing chamber

Assignee: Applied Materials, Inc.
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Quick Facts
Patent No.
US 7,678,194
App. No.
11/563,830
Granted
Mar 16, 2010
Kind
B2
Abstract

A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.

Claims (18)

1. A method for generating gas for a processing system, comprising:

providing a precursor material disposed in a lower region of a canister;

flowing a carrier gas from an inlet port through an upper region of the canister along an extended mean path to an outlet port, wherein the extended mean path is created by a plurality of baffles prefabricated and disposed vertically in an upper region of the canister; and

heating the precursor material to generate a process gas.

2. The method of claim 1 , wherein the step of flowing the carrier gas along the mean extended path further comprises directing a flow of the carrier gas away from the precursor material.

3. The method of claim 2 , wherein the flow is directed towards a sidewall of the canister.

4. The method of claim 2 , wherein the flow is directed towards a top of the canister.

5. The method of claim 1 , wherein the baffles is disposed between the inlet port and the outlet port of the canister.

6. The method of claim 5 , wherein the step of flowing the carrier gas along the mean extended path further comprises:

diverting a flow of the carrier gas around the baffle disposed between the inlet port and the outlet port of the canister.

7. The method of claim 1 , wherein the step of heating further comprises at least one of the heating steps from the group consisting of heating the canister, heating an interior volume of the canister, and heating the carrier gas prior to entering the canister.

8. The method of claim 1 , further comprising the step of agitating the precursor material.

9. The method of claim 8 , wherein the step of agitating the precursor material is accomplished by at least one of a magnetic stirrer, a mixer, or a bubbler.

10. The method of claim 8 , further comprising the step of capturing particulate matter entrained in the process gas.

11. The method of claim 1 , wherein the step of heating further comprises subliming the precursor material.

12. The method of claim 1 , wherein the precursor material is selected from the group consisting of tetrakis (dimethylamido) titanium (TDMAT), tertbutylimino tris(diethylamido) tantalum (TBTDET), and pentakis (ethylmethylamido) tantalum (PEMAT).

13. The method of claim 1 , wherein the baffle is a prefabricated insert positioned on the top of the canister.

14. The method of claim 1 , wherein the baffle is disposed on and perpendicular to the top of the canister.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2006
From: GANGULI, SESHADRI; CHEN, LING; KU, VINCENT W.
To: APPLIED MATERIALS, INC.
Reel/Frame 018560/0155 →
Continuity (2)
Division 1019872700 · Jul 17, 2002
Related Publication 20070089817A1 · Apr 26, 2007