SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.
1 . A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on a main surface of said semiconductor substrate with a gate insulation film therethrough;
a sidewall spacer formed so as to cover a side surface of said gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
a source region and a drain region formed in the main surface of said semiconductor substrate so as to sandwich said gate electrode;
a protection film formed so as to cover an end surface of said silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region; and
a metal silicide layer formed in said source region and said drain region on a side of said protection film away from said gate electrode.
2 . The semiconductor device according to claim 1 , wherein said protection film is a silicon oxide film.
3 . The semiconductor device according to claim 1 , wherein said protection film is a silicon nitride film.
4 . The semiconductor device according to claim 1 , wherein said protection film is an SiOC film.
5 . A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on a main surface of said semiconductor substrate with a gate insulation film therethrough;
a sidewall spacer formed so as to cover a side surface of said gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
a source region and a drain region formed in the main surface of said semiconductor substrate so as to sandwich said gate electrode; and
a metal silicide layer formed in said source region and said drain region on a side of said sidewall spacer away from said gate electrode, wherein
said silicon oxide film is nitrided at an end surface on the side of said source region and said drain region.
6 . A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on a main surface of said semiconductor substrate with a gate insulation film therethrough;
a sidewall spacer formed so as to cover a side surface of said gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
a source region and a drain region formed in the main surface of said semiconductor substrate so as to sandwich said gate electrode; and
a metal silicide layer formed in said source region and said drain region on a side of said sidewall spacer away from said gate electrode, wherein
said silicon oxide film is carbonized at an end surface on the side of said source region and said drain region.
7 . A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on a main surface of said semiconductor substrate with a gate insulation film therethrough;
a sidewall spacer formed so as to cover a side surface of said gate electrode and including a plurality of layers that include an SiOC film as a lowermost layer;
a source region and a drain region formed in the main surface of said semiconductor substrate so as to sandwich said gate electrode; and
a metal silicide layer formed in said source region and said drain region on a side of said sidewall spacer away from said gate electrode.
8 . A manufacturing method of a semiconductor device comprising the steps of:
forming a gate electrode on a main surface of said semiconductor substrate with a gate insulation film therethrough;
forming a source region and a drain region in the main surface of said semiconductor substrate so as to sandwich said gate electrode;
forming a sidewall spacer that covers a side surface of said gate electrode and includes at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
forming a protection film formed so as to cover at least an end surface of said silicon oxide film on a side of said source region and said drain region by forming an insulation film and etching back said insulation film after said sidewall spacer has been formed; and
forming a metal silicide layer in said source region and said drain region on a side of said sidewall spacer away from said gate electrode.
9 . A manufacturing method of a semiconductor device comprising the steps of:
forming a gate electrode on a main surface of said semiconductor substrate with a gate insulation film therethrough;
forming a source region and a drain region in the main surface of said semiconductor substrate so as to sandwich said gate electrode;
forming a sidewall spacer that covers a side surface of said gate electrode and includes at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
nitriding at least an end surface of said silicon oxide film on a side of said source region and said drain region by performing a plasma treatment in an atmosphere containing nitrogen after said sidewall spacer has been formed; and
forming a metal silicide layer in said source region and said drain region on a side of said sidewall spacer away from said gate electrode.
10 . A manufacturing method of a semiconductor device comprising the steps of:
forming a gate electrode on a main surface of said semiconductor substrate with a gate insulation film therethrough;
forming a source region and a drain region in the main surface of said semiconductor substrate so as to sandwich said gate electrode;
forming a sidewall spacer that covers a side surface of said gate electrode and includes at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon;
carbonizing at least an end surface of said silicon oxide film on a side of said source region and said drain region by performing a plasma treatment in a gas atmosphere containing carbon after said sidewall spacer has been formed; and
forming a metal silicide layer in said source region and said drain region on a side of said sidewall spacer away from said gate electrode.