Columnar crystal containing light emitting element and method of manufacturing the same
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.
1. A semiconductor element comprising:
a substrate;
a plurality of columnar crystals arranged on said substrate according to a predetermined density, and in which a device structure is formed;
wherein each of the plurality of columnar crystals comprises an n-type cladding layer, an i-type blocking layer, a light emitting layer, and a p-type cladding layer arranged in this order from the substrate, or each of the plurality of columnar crystals comprises an n-type cladding layer, a light emitting layer, an i-type blocking layer, and a p-type cladding layer arranged in this order from the substrate,
wherein a material of the p-type cladding layer comprises p-GaN:Mg or p-AlGaN:Mg, a material of the i-type blocking layer comprises intrinsic GaN, a material of the n-type cladding layer comprises n-GaN:Si or n-AlGaN:Si, and the light emitting layer has a single-quantum well structure comprising In x Ga 1-x N/In y Ga 1-y N or Al x Ga 1-x N/Al y Ga 1-y N or a multiple-quantum well structure comprising multiple alternating layers comprising In x Ga 1-x N/In y Ga 1-y N or Al x Ga 1-x N/Al y Ga 1-y N; and
wherein the p-type cladding layer has a truncated reverse cone shape; wherein upper surfaces of the p-type cladding layers are fused together to form a two-dimensionally continuous thin film layer.
2. The semiconductor element as claimed in claim 1 , having a filling component composed of a dielectric material between adjacent columnar crystals.
3. The semiconductor element as claimed in claim 1 , wherein each of the plurality of columnar crystals comprises an n-type cladding layer, an i-type blocking layer, a light emitting layer, and a p-type cladding layer arranged in this order from the substrate.
4. The semiconductor element as claimed in claim 1 , wherein x is 0 to 0.5.
5. A semiconductor element comprising:
a substrate;
a plurality of columnar crystals arranged on said substrate according to a predetermined density, and in which a device structure is formed;
wherein each of the plurality of columnar crystals comprises an n-type cladding layer, an i-type blocking layer, a light emitting layer, and a p-type cladding layer arranged in this order from the substrate, or each of the plurality of columnar crystals comprises an n-type cladding layer, a light emitting layer, an i-type blocking layer, and a p-type cladding layer arranged in this order from the substrate,
wherein a material of the p-type cladding layer comprises p-GaN:Mg or p-AlGaN:Mg, a material of the i-type blocking layer comprises intrinsic GaN, a material of the n-type cladding layer comprises n-GaN:Si or n-AlGaN:Si, and the light emitting layer has a single-quantum well structure comprising In x Ga 1-x N/In y Ga 1-y N or Al x Ga 1x N/Al y Ga 1-y N or a multiple-quantum well structure comprising multiple alternating layers comprising In x Ga 1-x N/In y Ga 1-y N or Al x Ga 1-x N/Al y Ga 1-y N,
wherein upper surfaces of the p-type cladding layers of the plurality of the columnar crystals are fused together to form a two-dimensionally continuous film layer; and
wherein each p-type cladding layer is gradually enlarged in a direction of c-axis, from a diameter of said columnar crystals to form a truncated reverse cone shape.