Method of forming a semiconductor package and structure thereof
View Patent ↗An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer ( 34, 46 ) over an encapsulant ( 32 ). The conductive layer includes a combination of a conductive glue ( 38, 48, 52 ) and a metal paint ( 36, 50 ). A wire loop ( 30 ) is coupled to the conductive layer and a leadframe ( 10 ).
1. A semiconductor package comprising:
a leadframe having a flag and a lead finger;
a semiconductor die attached to the flag and electrically coupled to the lead finger;
an encapsulant that covers the semiconductor die and at least a portion of the leadframe;
a conductive layer formed over at least a portion of an outer surface of the encapsulant for providing at least one of electromagnetic and radio frequency shielding, wherein the conductive layer comprises a combination of a shielding metal layer and a conductive glue layer, and wherein an entire inner surface of the conductive layer is in contact with the outer surface of the encapsulant; and
a wire electrically coupling the leadframe to the conductive layer.
2. The semiconductor package of claim 1 , wherein the conductive layer comprises a first layer of conductive glue stenciled on first areas of a surface of the encapsulant and the shielding metal stenciled on second areas of the surface of the encapsulant, wherein the second areas surround the first areas, and wherein the conductive glue layer covers the shielding metal and the first layer of conductive glue.
3. The semiconductor package of claim 1 , wherein the conductive layer comprises a first layer of conductive glue, a second, stenciled layer of shielding metal, and a third layer of conductive glue, wherein the first and third layers are in contact with each other at spaced locations.
4. The semiconductor package of claim 1 , wherein the wire is coupled to the leadframe by way of the semiconductor die and wire bonds.
5. The semiconductor package of claim 1 , wherein the shielding metal comprises a ferromagnetic material.
6. The semiconductor package of claim 5 , wherein the conductive ferromagnetic material comprises NiFe.
7. The semiconductor package of claim 1 , wherein the shielding metal comprises an element selected from the group consisting of aluminum, copper, tin and zinc.
8. A method of forming a semiconductor package comprising the steps of:
providing a leadframe having a flag and a plurality of lead fingers;
attaching a semiconductor die to the flag;
electrically coupling the semiconductor die to the lead fingers;
forming an additional wire loop that is electrically connected to the leadframe;
encapsulating the semiconductor die and at least a portion of the additional wire loop with an encapsulant, wherein another portion of the additional wire loop extends beyond the encapsulant and is exposed; and
forming a conductive layer over at least a portion of an outer surface of the encapsulant, wherein the conductive layer provides at least one of electromagnetic and radio frequency shielding, wherein the conductive layer comprises a combination of a shielding metal and a conductive glue, wherein an entire inner surface of the conductive layer is in contact with the outer surface of the encapsulant, and the another portion of the additional wire loop contacts the conductive layer, thereby electrically coupling the leadframe to the conductive layer.
9. The method of forming a semiconductor package of claim 8 , wherein the forming a conductive layer step comprises:
forming a first layer comprising the shielding metal over the encapsulant, wherein the shielding metal is applied to the encapsulant through a stencil; and
forming a second layer comprising the conductive glue over the encapsulant and the shielding metal, wherein the second layer is in contact with both the first layer and the encapsulant.
10. The method of forming a semiconductor package of claim 8 , wherein the forming a conductive layer step comprises:
forming a first layer of the conductive glue over the encapsulant;
forming a second layer comprising the shielding metal over the first layer, wherein the shielding metal is applied to the first layer through a stencil; and
forming a third layer comprising the conductive glue over the first and second layers, wherein the third layer contacts and adheres to both the first and second layers.
11. The method of forming a semiconductor package of claim 8 , wherein the additional wire loop is coupled to the leadframe by way of the semiconductor die and wire bonds.
12. The method of forming a semiconductor package of claim 8 , wherein the shielding metal comprises a ferromagnetic material.
13. The method of forming a semiconductor package of claim 12 , wherein the conductive ferromagnetic material comprises NiFe.
14. The method of forming a semiconductor package of claim 8 , wherein the shielding metal comprises an element selected from the group consisting of aluminum, copper, tin and zinc.
15. A method of forming a semiconductor package comprising the steps of:
providing a leadframe panel having first and second leadframes, each of the first and second leadframes including a flag and a plurality of lead fingers;
attaching first and second semiconductor dies respectively to the flags of the first and second leadframes;
electrically coupling the first and second semiconductor dies respectively to the fingers of the first and second leadframes;
providing a wire bond having a first end and a second end;
electrically coupling the first end of the wire bond to a lead finger of the first leadframe and the second end of the wire bond to a lead finger of the second leadframe;
forming an encapsulant over the first and second semiconductor dies and the wire bond, wherein a portion of the wire bond extends beyond the encapsulant such that said portion of the wire bond is exposed;
forming a conductive layer over at least a portion of an outer surface of the encapsulant and the wire bond, wherein the conductive layer provides at least one of electromagnetic and radio frequency shielding, wherein the conductive layer is electrically coupled to the exposed portion of the wire bond, wherein an entire inner surface of the conductive layer is in contact with the encapsulant, and wherein the conductive layer comprises a combination of a shielding metal and a conductive glue; and
singulating the leadframe panel to form first and second packaged devices.
16. The method of forming a semiconductor package of claim 15 , wherein the encapsulant forming step comprises:
forming the encapsulant over the first and second semiconductor dies and the wire bond; and
exposing a portion of the wire bond by removing a portion of the encapsulant.
17. The method of forming a semiconductor package of claim 15 , wherein the forming a conductive layer step comprises:
forming a first layer comprising the shielding metal over the encapsulant, wherein the shielding metal is applied to the encapsulant through a stencil; and
forming a second layer comprising the conductive glue over the encapsulant and the shielding metal, wherein the second layer is in contact with both the first layer and the encapsulant.
18. The method of forming a semiconductor package of claim 15 , wherein the forming a conductive layer step comprises:
forming a first layer of the conductive glue over the encapsulant;
forming a second layer comprising the shielding metal over the first layer, wherein the shielding metal is applied to the first layer through a stencil; and
forming a third layer comprising the conductive glue over first and second layers, wherein the third layer contacts and adheres to both the first and second layers.
19. The method of forming a semiconductor package of claim 15 , wherein the shielding metal comprises a ferromagnetic material.