Image sensor for reduced dark current
View Patent ↗A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n-type peripheral sidewall formed in a p-type substrate region underlying a pixel array region to separate the pixel array region from a peripheral circuitry region of the image sensor. The method and structure also provide improved protection from blooming.
1. A method of forming a structure for isolating a pixel imaging area, said method comprising:
forming a second conductivity type region, and a first conductivity type region over said second conductivity type region, in a substrate;
forming an isolation structure having at least one sidewall of a second conductivity type in said substrate to contact said second conductivity type region and define a separated pixel array region and peripheral circuit region; and
forming at least one first conductivity type wall for contacting said first conductivity type region, said first conductivity type wall being formed entirely between said at least one second conductivity type sidewall and said pixel array region.
2. The method of claim 1 wherein forming said second conductivity type region comprises forming a well under said pixel array region and in electrical communication with said sidewall.
3. The method of claim 2 wherein forming said well comprises forming the second conductivity type region to separate said first conductivity type region from another first conductivity type region.
4. The method of claim 1 wherein forming said sidewall comprises forming said sidewall around a perimeter of said pixel array region.
5. The method of claim 1 wherein forming said first conductivity type region comprises forming an epitaxial layer.
6. The method of claim 1 wherein said first conductivity type comprises a p-type conductivity and said second conductivity type comprises an n-type conductivity.
7. The method of claim 1 wherein forming said sidewall comprises forming a contiguous structure.