IP Library Granted Patent US 7,619,678
Granted Patent B2
US 7,619,678 · App. 11/584,560 · Granted Nov 17, 2009

Solid state imaging device and method for manufacturing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,619,678
App. No.
11/584,560
Granted
Nov 17, 2009
Kind
B2
Abstract

A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Claims (34)

1. A solid state imaging device comprising:

a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer;

a transparent component formed above the second transparent layer; and

an adhesive layer for bonding the second transparent layer and the transparent component,

wherein the first transparent layer has a refractive index lower than a refractive index of the microlens.

2. The solid state imaging device of claim 1 , wherein the first transparent layer is made of a fluorine-containing resin.

3. The solid state imaging device of claim 1 , wherein the second transparent layer is made of material which is more hydrophilic than the first transparent layer.

4. The solid state imaging device of claim 1 , wherein the second transparent layer has a refractive index of 1.3 or more and 1.6 or less.

5. The solid state imaging device of claim 1 , wherein the second transparent layer is made of a resin containing no fluorine in its molecular structure.

6. A solid state imaging device comprising:

a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and made of material which is more hydrophilic than the first transparent layer;

a transparent component formed above the second transparent layer; and

an adhesive layer for bonding the second transparent layer and the transparent component,

wherein the first transparent layer has a refractive index lower than a refractive index of the microlens.

7. The solid state imaging device of claim 1 , wherein

the first transparent layer is made of a fluorine-containing resin and

the second transparent layer is made of at least one of an acrylic resin, a styrene resin, an epoxy resin and polyvinyl alcohol.

8. A method for manufacturing a solid state imaging device comprising the steps of:

(a) preparing a substrate in the form of a wafer having a light receiving element for converting incident light into an electronic signal and a microlens provided above the light receiving element to collect incident light on the light receiving element;

(b) forming a first transparent layer to cover at least the top surface of the microlens, wherein the first transparent layer has a refractive index lower than a refractive index of the microlens;

(c) forming a second transparent layer harder than the first transparent layer on the first transparent layer; and

(d) cutting the wafer-shaped substrate into chips with the top surface of the second transparent layer exposed.

(e) bonding a transparent component onto the second transparent layer with an adhesive.

9. A method for manufacturing a solid state imaging device comprising the steps of:

(a) preparing a substrate in the form of a wafer having a light receiving element for converting incident light into an electronic signal and a microlens provided above the light receiving element to collect incident light on the light receiving element;

(b) forming a first transparent layer to cover at least the top surface of the microlens, wherein the first transparent layer has a refractive index lower than a refractive index of the microlens;

(c) forming a second transparent layer made of material which is more hydrophilic than the first transparent layer on the first transparent layer; and

(d) cutting the wafer-shaped substrate into chips with the top surface of the second transparent layer exposed and water supplied.

(e) bonding a transparent component onto the second transparent layer with an adhesive.

10. The solid state imaging device of claim 1 , wherein a surface of the first transparent layer is flat.

11. The solid state imaging device of claim 1 , wherein the refractive indices of the microlends, the first transparent layer, and the second transparent layer are about 1.55 to 2.0, about 1.3 to 1.5, and about 1.3 to 1.6, respectively.

12. The solid state imaging device of claim 1 , wherein the adhesive layer is made of a thermosetting resin or an UV curable resin.

13. The solid state imaging device of claim 1 , wherein a transparent component is made of glass.

14. The method of claim 9 , wherein the step (d), abatement is washed away.

Assignments (6)
CHANGE OF NAME Recorded Nov 3, 2021
From: CONVERSANT INTELLECTUAL PROPERTY INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 058793/0748 →
RELEASE OF SECURITY INTEREST Recorded Nov 11, 2020
From: CPPIB CREDIT INVESTMENTS INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 054384/0581 →
AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2016
From: PANASONIC CORPORATION
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 040393/0332 →
CHANGE OF NAME Recorded Nov 24, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0671 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2007
From: KOMATSU, TOMOKO; MASUDA, TOMOKI; TERANISHI, NOBUKAZU
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 018931/0416 →