Wafer encapsulated microelectromechanical structure and method of manufacturing same
There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.
1. A method comprising:
forming a cavity in a first substrate;
depositing an intermediate layer on the first substrate after forming the cavity;
securing a second substrate to the intermediate layer;
forming a microelectromechanical structure in a portion of the second substrate;
encapsulating the microelectromechanical structure; and
wherein forming the microelectromechanical structure in the portion of the second substrate comprises forming the microelectromechanical structure in the portion of the second substrate before securing the second substrate to the intermediate layer.
2. The method of claim 1 wherein the first substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide.
3. The method of claim 1 wherein forming a cavity in a first substrate comprises forming a cavity in a first substrate using lithography and etching.
4. The method of claim 1 wherein forming a cavity in a first substrate comprises forming a cavity that includes a depth of about 1 μm in a first substrate.
5. The method of claim 1 wherein depositing or growing an intermediate layer on the first substrate comprises growing an intermediate layer on the first substrate.
6. A method comprising:
forming a cavity in a first substrate;
depositing an intermediate layer on the first substrate after forming the cavity;
securing a second substrate to the intermediate layer;
forming a microelectromechanical structure in a portion of the second substrate;
encapsulating the microelectromechanical structure; and
wherein depositing or growing an intermediate layer on the first substrate comprises depositing an intermediate layer on the first substrate.
7. The method of claim 1 wherein depositing or growing an intermediate layer on the first substrate comprises depositing or growing a native oxide on the first substrate.
8. The method of claim 1 wherein depositing or growing an intermediate layer on the first substrate comprises depositing or growing a thin insulating layer on the first substrate.
9. The method of claim 1 wherein the second substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.
10. The method of claim 1 wherein securing a second substrate to the intermediate layer comprises bonding a second substrate to the intermediate layer.
11. The method of claim 10 wherein bonding a second substrate to the intermediate layer comprises fusion bonding and/or anodic-like bonding a second substrate to the intermediate layer.
12. The method of claim 1 further comprising forming a contact, wherein a first portion of the contact is formed from a portion of the second substrate.
13. The method of claim 1 wherein a surface of the intermediate layer forms a wall of the chamber.
14. The method of claim 1 further comprising forming a cavity in the second substrate, wherein the cavity in the second substrate forms a portion of the chamber.
15. A method comprising:
forming a cavity in a first substrate;
depositing an intermediate layer on the first substrate after forming the cavity;
securing a second substrate to the intermediate layer;
forming a microelectromechanical structure in a portion of the second substrate;
securing a third substrate to the second substrate to encapsulate the microelectromechanical structure; and
wherein forming the microelectromechanical structure in the portion of the second substrate comprises forming the microelectromechanical structure in the portion of the second substrate before securing the second substrate to the intermediate layer.
16. The method of claim 15 wherein the third substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.
17. The method of claim 15 wherein securing a third substrate to the second substrate comprises bonding a third substrate to the second substrate.
18. The method of claim 15 wherein securing a third substrate to the second substrate comprises fusion bonding and/or anodic-like bonding a third substrate to the second substrate.
19. A method comprising:
forming a cavity in a first substrate;
depositing an intermediate layer on the first substrate after forming the cavity;
securing a second substrate to the intermediate layer;
forming a microelectromechanical structure in a portion of the second substrate;
securing a third substrate to the second substrate to encapsulate the microelectromechanical structure;
forming a contact wherein (i) a first portion of the contact is formed from a portion of the second substrate and (ii) a second portion of the contact is formed from a portion of the third substrate;
wherein the first portion of the contact is a semiconductor material having a first conductivity, the third substrate is a semiconductor material having a second conductivity, and the second portion of the contact is a semiconductor material having the first conductivity;
wherein the second portion of the contact is a polycrystalline or monocrystalline silicon that is counterdoped to include the first conductivity; and
further comprising forming a trench around at least a portion of the second portion of the contact.
20. The method of claim 19 wherein the trench includes a first material disposed therein to electrically isolate the second portion of the contact from the third substrate.
21. The method of claim 20 wherein the first material is an insulator material.
22. The method of claim 19 wherein the third substrate is a semiconductor material having a first conductivity and the trench is (i) a semiconductor material having a second conductivity or (ii) an insulation material.
23. The method of claim 15 wherein a surface of the third substrate forms a wall of the chamber.
24. The method of claim 15 further comprising forming a cavity in the third substrate, wherein the cavity in the third substrate forms a portion of the chamber.