Gallium nitride-based compound semiconductor light emitting device
This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.
1. A gallium nitride-based compound semiconductor light emitting device comprising an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further comprising a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively,
wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer,
a first mixed positive electrode-metal layer is present in the p-type semiconductor layer at the positive-electrode-side surface,
the first mixed positive electrode-metal layer includes a metal that forms the contact metal layer,
a percentage of the amount of the metal that forms the contact metal layer in the first mixed positive electrode-metal layer to a total amount of metals in the first mixed positive electrode-metal layer is 0.01 to 30 atomic percent,
a second mixed semiconductor-metal layer is present in the contact metal layer at the p-type-semiconductor-layer-side surface,
the second mixed semiconductor-metal layer includes a group III metal,
a percentage of the amount of the group III metal in the second mixed semiconductor-metal layer to a total amount of metals in the second mixed semiconductor-metal layer is 0.1 to 50 atomic percent, and
the contact metal layer is of a platinum group metal or Ag.
2. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the first mixed positive electrode-metal layer is 0.1 to 10 nm.
3. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the second mixed semiconductor-metal layer is 0.1 to 2.5 nm.
4. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein the contact metal layer is of platinum.
5. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the contact metal layer is 0.1 to 7.5 nm.
6. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the contact metal layer is 5 nm or less.
7. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the contact metal layer is 0.5 to 2.5 nm.
8. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein the current diffusion layer is of a metal selected from the group consisting of gold, silver, copper, and an alloy including at least one thereof.
9. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein the current diffusion layer is of gold.
10. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the current diffusion layer is 1 to 20 nm.
11. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the current diffusion layer is 10 nm or less.
12. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein a thickness of the current diffusion layer is 3 to 6 nm.
13. The gallium nitride-based compound semiconductor light emitting device according to claim 1 ,
wherein the bonding pad layer includes a eutectic solder material.
14. The gallium nitride-based compound semiconductor light emitting device according to claim 1 , wherein the bonding pad layer includes Au, Sn, or a tertiary solder alloy including Au and Sn.