Patent Assignment
Reel/Frame 029489/0249
Assignment of Assignor's Interest
Recorded: 2012-12-18
Pages: 6
Assignor
SHOWA DENKO KABUSHIKI KAISHA
Executed: 2012-12-03
Assignee
TOYODA GOSEI CO., LTD.
1, HARUHINAGAHATA, KIYOSU-SHI, AICHI, 452-8564, JAPAN
Covered Properties
(97)
Electrode for Light-Emitting Semiconductor Devices and Method of Producing the Electrode
Patent:
6,268,618 →
Application:
09/073,765 →
Group-Iii Nitride Semiconductor Light-Emitting Device
Patent:
6,541,797 →
Application:
09/204,280 →
Nitride Semiconductor Light-Emitting Device and Manufacturing Method of the Same
Patent:
6,147,363 →
Application:
09/217,629 →
Method of Growing Group Iii Nitride Semiconductor Crystal Layer and Semiconductor Device Incorporating Group Iii Nitride Semiconductor Crystal Layer
Patent:
6,069,021 →
Application:
09/270,749 →
Elo Semiconductor Substrate
Patent:
6,368,733 →
Application:
09/369,148 →
Group-Iii Nitride Semiconductor Light-Emitting Device
Patent:
6,153,894 →
Application:
09/438,788 →
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
Patent:
6,194,744 →
Application:
09/500,450 →
Nitride semiconductor light-emitting device and manufacturing method of the same
Patent:
6,335,219 →
Application:
09/624,221 →
Semiconductor Light-Emitting Device, Electrode for the Device, Method for Fabricating the Electrode, Led Lamp Using the Device, and Light Source Using the Led Lamp
Patent:
6,512,248 →
Application:
09/691,057 →
Electrode for light-emitting semiconductor devices and method of producing the electrode
Patent:
6,326,223 →
Application:
09/694,319 →
Electrode for Light-Emitting Semiconductor Devices
Patent:
6,403,987 →
Application:
09/694,325 →
Method of Fabricating Group-Iii Nitride Semiconductor Crystal, Method of Fabricating Gallium Nitride-Based Compound Semiconductor, Gallium Nitride-Based Compound Semiconductor, Gallium Nitride-Based Compound Semiconductor Light-Emitting Device, and Light Source Usi
Electrode for Light-Emitting Semiconductor Devices and Method of Producing the Electrode
Semiconductor Light-Emitting Device, Electrode for the Device, Method for Fabricating the Electrode, Led Lamp Using the Device, and Light Source Using the Led Lamp
Group Iii Nitride Semiconductor Crystal, Production Method Thereof and Group Iii Nitride Semiconductor Epitaxial Wafer
Method for Manufacturing P-Type Group Iii Nitride Semiconductor, and Group Iii Nitride Semiconductor Light-Emitting Device
Method for Fabrication of Semiconductor Light-Emitting Device and the Device Fabricated by the Method
Nitride Semiconductor; Light-Emitting Device, Light-Emitting Diode, Laser Device and Lamp Using the Semiconductor; and Production Methods Thereof
Group-Iii Nitride Semiconductor Device
Production Method for Semiconductor Device
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device and Negative Electrode Thereof
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device and Negative Electrode Thereof
Group Iii Nitride Semiconductor Device and Light-Emitting Device Using the Same
N-Type Group Iii Nitride Semiconductor Layered Structure
P-Type Group Iii Nitride Semiconductor and Production Method Thereof
Group Iii Nitride Semiconductor Multilayer Structure
Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof
Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof
Compound Semiconductor Light-Emitting Device
Gallium Nitride-Based Semiconductor Device
Gallium Nitride-Based Semiconductor Device
Pn Junction Type Group Iii Nitride Semiconductor Light-Emitting Device
Group Iii Nitride Semiconductor Light-Emitting Device, Forming Method Thereof, Lamp and Light Source Using Same
Group Iii Nitride Semiconductor Light-Emitting Device and Method of Producing the Same
Transparent Positive Electrode
Light-Emitting Device, Method of Fabricating the Device, and Led Lamp Using the Device
Electrode for Light-Emitting Semiconductor Devices and Method of Producing the Electrode
Transparent Electrode
Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof
Group Iii Nitride Semiconductor Stacked Structure
Production Method of Gallium Nitride-Based Compound Semiconductor Multilayer Structure
Gallium Nitride-Based Semiconductor Light Emitting Device and Process for Its Production
Group Iii Nitride Semiconductor Stacked Structure and Production Method Thereof
Production Method of Compound Semiconductor Light-Emitting Device Wafer
Gallium Nitride-Based Compound Semiconductor Light Emitting Device
Gallium Nitride-Based Semiconductor Stacked Structure, Production Method Thereof, and Compound Semiconductor and Light-Emitting Device Each Using the Stacked Structure
Gallium Nitride-Based Semiconductor Stacked Structure
Positive Electrode for Semiconductor Light-Emitting Device
Transparent Electrode for Semiconductor Light-Emitting Device
Positive Electrode for Compound Semiconductor Light-Emitting Device
N-Type Group Iii Nitride Semiconductor Stacked Layer Structure
Group Iii Nitride Semiconductor Light-Emitting Device
Gallium Nitride-Based Semiconductor Stacked Structure, Method for Fabrication Thereof,Gallium Nitride-Based Semiconductor Device and Lamp Using the Device
Nitride Semiconductor Light-Emitting Device and Method for Fabrication Thereof
Process for Producing Iii Group Nitride Compound Semiconductor Light Emitting Device, Iii Group Nitride Compound Semiconductor Light Emitting Device and Lamp
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
Light-Emitting Diode and Light-Emitting Diode Lamp
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device with an Electrode Covered by an Over-Coating Layer
Light-Emitting Diode and Light-Emitting Diode Lamp
Gallium Nitride-Based Compound Semiconductor Light Emitting Device
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device and Production Method Thereof
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
Electrode for Semiconductor Light Emitting Device
Nitride Semiconductor Light Emitting Device and Production Method Thereof
Production Method for Nitride Semiconductor Light Emitting Device
Nitride Semiconductor Light-Emitting Device and Production Method Thereof
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
Compound Semiconductor Light-Emitting Device and Method for Manufacturing the Same
Flip-Chip Type Semiconductor Light-Emitting Device, Method for Manufacturing Flip-Chip Type Semiconductor Light-Emitting Device, Printed Circuit Board for Flip-Chip Type Semiconductor Light-Emitting Device, Mounting Structure for Flip-Chip Type Semiconductor Light-
Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for Manufacturing Same
Gallium Nitride Based Compound Semiconductor Light-Emitting Device Having High Emission Efficiency and Method of Manufacturing the Same
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
Apparatus for Producing Group-Iii Nitride Semiconductor Layer, Method of Producing Group-Iii Nitride Semiconductor Layer, Method of Producing Group-Iii Nitride Semiconductor Light-Emitting Device, Group-Iii Nitride Semiconductor Light-Emitting Device Thereof, and L
Light-Emitting Device, Manufacturing Method Thereof, and Lamp
Semiconductor Light-Emitting Device, Manufacturing Method Thereof, and Lamp
Gan-Based Semiconductor Light-Emitting Device and Method for the Fabrication Thereof
Gallium Nitride Compound Semiconductor Light-Emitting Device, Method of Manufacturing the Same, and Lamp Including the Same
Group Iii Nitride Semiconductor Light Emitting Device, Method for Producing the Same, and Lamp Thereof
Gan Based Semiconductor Light Emitting Device and Lamp
Method of Manufacturing a Semiconductor Light-Emitting Device
Method of Manufacturing Gallium Nitride-Based Compound Semiconductor Light-Emitting Device, Gallium Nitride-Based Compound Semiconductor Light-Emitting Device, and Lamp
Group Iii Nitride Compound Semiconductor Stacked Structure
Manufacturing Method of Group Iii Nitride Semiconductor Light-Emitting Device
Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof
Group-Iii Nitride Compound Semiconductor Light-Emitting Device, Method of Manufacturing Group-Iii Nitride Compound Semiconductor Light-Emitting Device, and Lamp
Compound Semiconductor Device and Method of Manufacturing Compound Semiconductor Device
Group-Iii Nitride Compound Semiconductor Light-Emitting Device, Method of Manufacturing Group-Iii Nitride Compound Semiconductor Light-Emitting Device, and Lamp
Method for Manufacturing Group Iii Nitride Semiconductor, Method for Manufacturing Group Iii Nitride Semiconductor Light-Emitting Device, Group Iii Nitride Semiconductor Light-Emitting Device, and Lamp
Method for Producing Group Iii Nitride Semiconductor Light-Emitting Device
Method for Producing Group Iii Nitride Semiconductor Light Emitting Device, Group Iii Nitride Semiconductor Light Emitting Device, and Lamp
Method for Manufacturing Group Iii Nitride Compound Semiconductor Light-Emitting Device, Group Iii Nitride Compound Semiconductor Light-Emitting Device, and Lamp
Method for Producing Light-Emitting Diode
Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
Method for Manufacturing Group Iii Nitride Semiconductor Layer, Method for Manufacturing Group Iii Nitride Semiconductor Light-Emitting Device, and Group Iii Nitride Semiconductor Light-Emitting Device, and Lamp
Method of Manufacturing Semiconductor Light-Emitting Device
Group Iii Nitride Semiconductor Multilayer Structure and Production Method Thereof
Method for Manufacturing Group Iii Nitride Semiconductor Layer, Method for Manufacturing Group Iii Nitride Semiconductor Light-Emitting Device, and Group Iii Nitride Semiconductor Light-Emitting Device, and Lamp
Related Assignments
(15)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 10, 1998
From: MIKI, HISAYUKI; UDAGAWA, TAKASHI; MURAKI, NORITAKA; OKUYAMA, MINEO
To: SHOWA DENKO K.K.
Reel/Frame 009380/0478 →
Assignment of Assignor's Interest
Dec 3, 1998
From: UDAGAWA, TAKASHI
To: SHOWA DENKO K.K.
Reel/Frame 009668/0590 →
Assignment of Assignor's Interest
Dec 22, 1998
From: UDAGAWA, TAKASHI
To: SHOWA DENKO K.K.
Reel/Frame 009666/0146 →
Assignment of Assignor's Interest
Mar 17, 1999
From: UDAGAWA, TAKASHI; TERASHIMA, KAZUTAKA; NISHIMURA, SUZUKA; TSUZAKI, TAKUJI
To: SHOWA DENKO K.K.
Reel/Frame 009828/0056 →
Assignment of Assignor's Interest
Oct 25, 1999
From: NISHINAGA, TATAU
To: SHOWA DENKO K.K.
Reel/Frame 010332/0512 →
Assignment of Assignor's Interest
Nov 12, 1999
From: UDAGAWA, TAKASHI
To: SHOWA DENKO KABUSHIKI KAISHA
Reel/Frame 010397/0023 →
Assignment of Assignor's Interest
Oct 19, 2000
From: TAKEUCHI, RYOUICHI; MITANI, KAZUHIRO; NABEKURA, WATARU; UDAGAWA, TAKASHI
To: SHOWA DENKO K.K.
Reel/Frame 011220/0297 →
Assignment of Assignor's Interest
Apr 17, 2002
From: URASHIMA, YASUHITO; OKUYAMA, MINEO; SAKURAI, TETSUO; MIKI, HISAYUKI
To: SHOWA DENKO K.K.
Reel/Frame 013039/0217 →
Assignment of Assignor's Interest
Mar 31, 2005
From: MIKI, HISAYUKI; SAKURAI, TETSUO; OKUYAMA, MINEO
To: SHOWA DENKO K.K.
Reel/Frame 016739/0529 →
Assignment of Assignor's Interest
Mar 3, 2006
From: KOBAYAKAWA, MASATO
To: SHOWA DENKO K.K.
Reel/Frame 017650/0930 →
Assignment of Assignor's Interest
Mar 31, 2006
From: KOBAYAKAWA, MASATO; TOMOZAWA, HIDEKI; OKUYAMA, MINEO
To: SHOWA DENKO K.K.
Reel/Frame 017773/0610 →
Assignment of Assignor's Interest
Apr 13, 2006
From: SAKAI, HIROMITSU; OKUYAMA, MINEO
To: SHOWA DENKO K.K.
Reel/Frame 017950/0579 →
Assignment of Assignor's Interest
May 19, 2006
From: YAKUSHIJI, KENJI; KUSUNOKI, KATSUKI; MIKI, HISAYUKI
To: SHOWA DENKO K.K.
Reel/Frame 017937/0630 →
Assignment of Assignor's Interest
Jun 6, 2006
From: KAMEI, KOJI
To: SHOWA DENKO K.K.
Reel/Frame 017986/0690 →
Assignment of Assignor's Interest
Jan 19, 2007
From: YAKUSHIJI, KENJI
To: SHOWA DENKO K.K.
Reel/Frame 018829/0179 →